BFQ268 Search Results

BFQ268

Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

SOT128

Abstract: BFQ262 BFQ265 BFQ268 X3A-BFQ268
Contextual Info: bb53^31 Philips Sem iconductors 0032211 Em ^BAPX Product specification NPN 1 GHz video transistor crystal X3A-BFQ268 b^E T> N AMER P H I L I P S / D I S C RE TE DESCRIPTION M ECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SO T172). Crystals are supplied

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

BFQ26

Abstract: BFQ268
Contextual Info: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down

motorola transistor 5331

Abstract: BFQ268
Contextual Info: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to

BFQ262

Abstract: BFQ265 BFQ268 X3A-BFQ268 SOT128 SOT172 crystal PHILIPS
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110021, OQMblDl 7fl3 SbE D DESCRIPTION IPHIN MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

Contextual Info: bbS 3T31 Philips Semiconductors 0032211 2H1 ^ l A P X Product specification NPN 1 GHz video transistor crystal — N X3A-BFQ268 AMER PHILIPS/DISCRETE DESCRIPTION fc^E 1 MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

Contextual Info: Philips Semiconductors _ - NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION _ Product specification - 7^ 3 3 - 0 5 BFQ268; BFQ268/1 SbE D m 71106Bb DG45bS7 344 H P H I N PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

fr91a

Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

128-B

Abstract: SOT128B bfq162
Contextual Info: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A