EMITTER 660 880 940 Search Results

oximeter

Abstract: oximeter schematic finger probe METRIX schematic symbols 660 880 940 led oximeter 660 940 D 880 criticare 940 nm LED
Contextual Info: PHOTONIC DETECTORS INC. Four Drive Emitter, Oximeter Component 880/660/940 nm Type PDI-E839 Criticare, Data Scope, NovaMetrix,Ohmeda& Scimed capable PACKAGE DIMENSIONS INCH (mm) .265 [6.73] CL .161 [4.08] CL .133 [3.37] CL .105 [2.65] .075 [1.90] .055 [1.40]

ir led 940 nm 1 w

Abstract: 660 880 940 led IR LED 940 nm spo2 spo2 specifications spo2 features 895nm emitter 660 880 940 dual-emitter DUAL-EMITTER MATCHING-PHOTODET
Contextual Info: DUAL EMITTER / MATCHING PHOTODETECTOR SERIES MOLDED LEAD FRAME AND LEADLESS CERAMIC SUBSTRATE APPLICATIONS FEATURES • SPO2 • Blood Analysis • Medical Instrumentaion • Ratiometric Instruments The Dual LED series consist of a 660 nm red LED and a companion IR

2SD106AI-17

Abstract: 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515
Contextual Info: Treiber für IGBT und Power Mosfet Drivers for IGBTs and Power Mosfets No. of Gate Channels Voltage Type IGBT max. VCE VISO Ipeak 2SD106AI 2 +/- 15 V 1200 V 2500 V 6A 2SD106AI-17 2 +/- 15 V 1700 V 4000 V 6A 6SD106EI 6 +/- 15 V 1200 V 2500 V 6A 6SD106EI-17

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

missile guidance

Abstract: ULTRA VIOLET LED infrared medical photo sensor VSF665C2 photo sensor 700 photo sensor devices MTRS1070 "infrared led" 980 nm infrared emitter download
Contextual Info: STANDARD PHOTO SENSORS Visible Emitters Part # Power Output Peak Wavelength Material Beam Angle VSC572M3A 140 W 570 InGaAlP ±80º MT7064-UR 5.5mW 660nm GaAlAs ±20º MT8060N2 5.5mW 680nm GaAlAs ±35º MT511-UR 5.0mW 660nm GaAlAs ±55º MT3200A-UR 5.0mW 660nm

IFR-GDC40PW

Contextual Info: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE

DIN 46200

Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
Contextual Info: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N

Contextual Info: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.

Photosensors

Contextual Info: Frequently Asked Questions What is the greatest distance at which an infrared solution will still work? Can IR photosensors detect visible light? What is the most efficient emitter? Yes. All of the Fairchild photosensors are of on-axis intensity, is the QED123.

Photosensors

Abstract: Photosensor Infrared photosensor QED123 QED223 QED234
Contextual Info: Frequently Asked Questions What is the greatest distance at which an infrared solution will still work? Can IR photosensors detect visible light? What is the most efficient emitter? Yes. All of the Fairchild photosensors are of on-axis intensity, is the QED123.

opto A7800 A

Abstract: opto A7800 GE-81 a7800 ALT1873 A7M1 photodiod modules a7800 a ALT042 ALY1167-XXX
Contextual Info: SMDONTAPEANDREEL 2.8mm X 3.6mm Super Bright/Ultra Bright IF = 20 mA CHIP LINE NUMBER PART NUMBER EMITTING LENS λρ nm COLOR COLOR TYP. TYP. MAX. MIN. TYP. (DEG.) GaAlAs / GaAs SB RED W.C. (R.C.) 660 1.7 2.2 85 140 120 GaAlAs / GaAlAs UR RED W.C. (R.C.)

B21G

Abstract: SMD-W01N SMD-R06F Y500 SMD-B01N A5F1 y410 SMD-A001 y502 y911
Contextual Info: L3 T1 LED’s unbased No. 30, 31 T1 Leuchtdioden ungesockelt T1 Diodes lumineuses sans socle All specifications according to information from our manufacturers, without additional quarantee on our part. Further types on request. Alle Spezifikationen basieren auf Angaben unserer Lieferanten,

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

79212

Abstract: en 50022-35 SF4 relay R0337 ah56 SF4-AH40 SF4-AH20 SF4-AH 74 hc 589 SF4-AH96
Contextual Info: SF4-AH DIMENSIONS Unit: mm in SF4-AH□ Sensor Assembly dimensions Mounting drawing for the sensor on which the sensor mounting brackets and the intermediate supporting brackets are mounted. <Back mounting> <Side mounting> 30 1.181 28 1.102 26 1.024 16.9 0.665

SMD transistor UY

Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
Contextual Info: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the

ns102

Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Contextual Info: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980

transistor 6c x

Abstract: E5 ic phototransistor 580 IR928-6C 340928
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

transistor c 5936 circuit diagram

Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a

transistor BD 139

Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a

darlington cascode second stage

Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such