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    EPA090A Search Results

    EPA090A Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPA090A
    		Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF 31.32KB 2
    EPA090A
    		Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 53.18KB 2
    EPA090AV
    		Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 53.19KB 2

    EPA090A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EPA090A

    Abstract: EPA090AV 280dBm
    Contextual Info: EPA090A/EPA090AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA090A AND 11.0dB FOR EPA090AV AT 18GHz 0.3 X 900 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA090A/EPA090AV EPA090A EPA090AV 18GHz EPA090AV) EPA090A 280dBm PDF

    EPA090A

    Abstract: EPA090AV
    Contextual Info: Excelics EPA090A/EPA090AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA090A AND 11.0dB FOR EPA090AV AT 18GHz 0.3 X 900 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA090A/EPA090AV EPA090A EPA090AV 18GHz EPA090A EPA090AV. PDF

    EPA090A

    Contextual Info: Excelics EPA090A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +28.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 900 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EPA090A 18GHz 12GHz EPA090A PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C PDF