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    EPA120EV Search Results

    EPA120EV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA120EV Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF

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    EPA120A

    Abstract: EPA120E EPA120EV
    Text: EPA120E/EPA120EV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    PDF EPA120E/EPA120EV EPA120E EPA120EV 18GHz EPA120EV) EPA120E EPA120A

    443-1 MAG

    Abstract: EPA120E EPA120EV
    Text: Excelics EPA120E/EPA120EV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original
    PDF EPA120E/EPA120EV EPA120E EPA120EV 18GHz EPA120E G1-43 EPA120EV. 443-1 MAG

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


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