EPC2001 Search Results

EPC2001

Abstract: EPC Gan transistor FX-93 FET MARKING QG
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC Gan transistor

Abstract: EPC2001 DIODE marking ED X9
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2001 eGaN FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mΩ ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2

stackpole potentiometer

Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/14 A 500 kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9017 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW

Texas Instruments Power Management Guide

Abstract: TPS53312 TPS65168 Samsung Exynos 5 TPS65178 ips 500w circuit diagram 500w push-pull power tl598 schematic diagram Acid Battery charger 48 volt circuit tl494 UCC25600 application note Buck-boost TL494
Contextual Info: Power Management Guide www.ti.com/power 2013 Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear regulators to highly efficient DC/DC

Contextual Info: Figure 3: Proper Measurement of Switch Node – OUT Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9002 development board does not have any current or thermal protection on board.

LM5113

Abstract: HMK325B7225K smd diode 5d SOD-323 EPC2001 GRM188R71H103KA0 AN-2149 22UF C3225X7R1C226K LM5025 RC0603FR-0710R
Contextual Info: National Semiconductor Application Note 2149 Min Chen October 12, 2011 Introduction IC Features The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium

"gallium nitride" mosfet

Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Contextual Info: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can

EPC2001

Abstract: EPC9002 rmcf0603ft10k0 EPC-200 HMK325B7225K j6 con4 03U40 stackpole potentiometer LM5113
Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9002 development board does not have any current or thermal protection on board.

J5 controller board circuit diagram

Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/35 A 300 kHz Buck converter CH1: PWM input voltage (VPWM) – CH4: Switch node voltage (VSW) NOTE. The EPC9013 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW

EPC2001

Abstract: ERJ-2RKF6810X RC0402FR-071KL diode c30 o2 IHLP1212BZE C2012X5R1C226K RC0402FR GPUL IHLP1212BZER ECJ0EB1E331K
Contextual Info: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9102 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not

j6 con4

Abstract: BAV19WS-7-F C1608C0G1H100D GRM188R61E105KA12D GRM188R71H102KA01D SDM03U40-7 EPC9002 optocoupler ic HMK325B7225K SIA513
Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9002 development board does not have any current or thermal protection on board.

Contextual Info: Using the UCC27611OLEVM-203 User's Guide Literature Number: SLUUA64 February 2013 User's Guide SLUUA64 – February 2013 Using the UCC27611OLEVM-203 1 Introduction This EVM is to aid in evaluating UCC27611. UCC27611 is a high-speed, single channel, low-side driver

Contextual Info: User's Guide SNVA625A – January 2012 – Revised May 2013 AN-2206 LM5114 Evaluation Board 1 Introduction The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations

Contextual Info: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9102 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not

Contextual Info: 1 2 4 3 5 6 A A 7 - 12 Vdc 8 U3 IN 7 NC MCP1703 OUT 1 NC 2 6 NC NC 3 GND 4 J1 1 2 CON2 C10 1uF, 25V NC C11 1uF, 25V C4 1uF, 25V 9 GND 5 VCC 1 2 CON2 J9 1 2 CON2 U1 A VCC 1 2 3 4 J2 J5 CON4 1 PWM1 B VDD 70V Max B 4 3 2 1 R1 10k Y R11 0.1uF, 25V U4 A C P2 Optional