EPC2010 Search Results

Contextual Info: EPC2010 eGaN FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2010 EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

SS8410BB

Contextual Info: 1 2 4 3 5 6 7 - 12 Vdc J1 1 2 A CON2 U3 IN OUT 1 7 NC NC 2 6 NC NC 3 5 NC GND 4 VCC A C11 1uF, 25V C4 1uF, 25V 9 GND C10 1uF, 25V 8 MCP1703 U13 EN C18 OPT IN NC GND D3 BAV21 OUT OPT TP2 Keystone 5015 J5 CON4 PWM1 1 B 2 B 3 GND VCC 6 VDD U2 6 C2 1uF, 25V 5 5

Contextual Info: Figure 4: Waveforms for VIN = 150 V to 5 V/5 A 100kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9003 development board does not have any current or thermal protection on board.