EPC2016 Search Results

Contextual Info: EPC2016 eGaN FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mΩ ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2016 EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mW ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9010 development board does not have any current or thermal protection on board.

Contextual Info: 1 2 3 4 5 6 A A 7 - 12 Vdc U3 8 1 2 7 CON2 C10 1uF, 25V 6 OUT NC NC NC NC NC GND 1 VCC 2 C11 1uF, 25V 3 C4 4 1uF, 25V 9 5 MCP1703 IN GND J1 PWM1 J2 U1 1 2 A VCC B J5 CON4 1 TP2 Keystone 5015 1 2 3 4 B VDD 70V Max R1 10k B 4 3 2 1 CON2 J9 1 2 GND Y Q1 R11 Zero