EPC8007 Search Results
EPC8007 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| EPC8007ENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRAN GAN 40V 3.8A BUMPED DIE | Original | 7 | ||||
| EPC8007TENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 40V 3.8A BUMPED DIE | Original | 7 |
EPC8007 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
j731Contextual Info: EPC8007 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 40V • RDS on , 160 mΩ • ID, 3.8 A • Optimized eGaN FET for high frequency applications EPC8007 eGaN FETs are supplied only in passivated die form with solder bars |
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EPC8007 EPC8007 j731 | |
EPC8004Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been |
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AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 | |
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Contextual Info: Figure 4: Typical Waveforms for VIN = 28 V to 3.3 V/4 A 5 MHz Buck converter CH2: (VOUT) Switch node voltage –– CH4: VPWM Input voltage NOTE. The EPC9027 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – OUT |
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EPC9027 EPC8007 |