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    EPROM L64 Search Results

    EPROM L64 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    AM27C010-70PI-G Rochester Electronics AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics Buy
    AM27C512-200DCB Rochester Electronics AM27C512 - 512K (64K x 8) CMOS EPROM Visit Rochester Electronics Buy

    EPROM L64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20RA10

    Abstract: 20RA10-15 PLDC20RA10
    Text: PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device — ICC max = 85 mA Military • High reliability — Proven EPROM technology 1PLDC20RA10 Features • • • • • • • • • Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability


    Original     		PDF PLDC20RA10 1PLDC20RA10 PLDC20RA10 20RA10 20RA10-15

    20RA10

    Abstract: 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1016 20RA10-25 RA1013
    Text: 0RA10 PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device — ICC max = 85 mA Military • High reliability — Proven EPROM technology Features • • • • • • • • • Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability


    Original     		PDF 0RA10 PLDC20RA10 20RA10 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1016 20RA10-25 RA1013

    20G10-25

    Abstract: 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108
    Text: PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Fully AC and DC tested


    Original     		PDF PLDC20G10B/PLDC20G10 24-Pin 20G10-25 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108

    20RA10

    Abstract: 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1021
    Text: fax id: 6015 1P LDC20 RA10 PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device Features • • • • • • • • • — ICC max = 85 mA Military • High reliability — Proven EPROM technology Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability


    Original     		PDF LDC20 PLDC20RA10 20RA10 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1021

    12L10

    Abstract: 16L6 18L4 20L10 20L8 20G102 CP 6014 pld20g10
    Text: fax id: 6014 1P LDC20 G1 0B/P LD C20 G1 0 PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns


    Original     		PDF LDC20 PLDC20G10B/PLDC20G10 24-Pin 12L10 16L6 18L4 20L10 20L8 20G102 CP 6014 pld20g10

    20G10

    Abstract: 20G10B-20 12L10 16L6 18L4 20L10 20L8
    Text: fax id: 6014 1P LDC20 G1 0B/P LD C20 G1 0 PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns


    Original     		PDF LDC20 PLDC20G10B/PLDC20G10 24-Pin 20G10 20G10B-20 12L10 16L6 18L4 20L10 20L8

    20G10

    Abstract: 20G10B-20 12L10 16L6 18L4 20L10 20L8
    Text: 0G10B/PLD PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology Features • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns


    Original     		PDF 0G10B/PLD PLDC20G10B/PLDC20G10 24-Pin 20G10 20G10B-20 12L10 16L6 18L4 20L10 20L8

    CE22V10

    Abstract: PALCE22V10-5PC PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5 PALCE22V10-7 palce programming Guide palce22v10 programming guide
    Text: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability


    Original     		PDF PALCE22V10 181-MHz 110-MHz 15-ns 25-ns CE22V10 PALCE22V10-5PC PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5 PALCE22V10-7 palce programming Guide palce22v10 programming guide

    C2614

    Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
    Text: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ


    Original     		PDF CY7C261 CY7C263/CY7C264 7C261) 300mil 600mil C2614 CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4

    CERPACK K73

    Abstract: 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB
    Text: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability


    Original     		PDF PALCE22V10 181-MHz 110-MHz 15-ns 25-ns Apr-98 01Q3A CY7B991-7LMB 01MXX CERPACK K73 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB

    palce22v10 programming guide

    Abstract: cypress palce22v10 programming guide CE22V10 cypress palce22v10 programming 22V10 22v10 pal CE22V1010 PALCE22V10-10JI PALCE22V10 PALCE22V10-10
    Text: 22V10 PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability


    Original     		PDF 22V10 PALCE22V10 181-MHz 110-MHz 15-ns 25-miconductor PALCE22V10 palce22v10 programming guide cypress palce22v10 programming guide CE22V10 cypress palce22v10 programming 22V10 22v10 pal CE22V1010 PALCE22V10-10JI PALCE22V10-10

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6015 Reprogrammable Asynchronous CMOS Logic Device — Icc max = 85 mA Military Featu res * High reliability • Advanced-user programmable macrocell • CMOS EPROM technology for reprogramm ability • Up to 20 input terms — Proven EPROM technology


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6014 PLDC20G10B/PLDC20G10 CYPRESS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammabliity • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tco = 10 ns, ts = 12 ns


    OCR Scan     		PDF 12L10, PLDC20G10B/PLDC20G10 24-Pin 24-Lead 300-Mil) 28-Square 28-Lead

    12l10

    Abstract: 20V8
    Text: fax id: 6014 I ¿Sfr- ¥ CYPRESS PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device • CMOS EPROM technology for reprogram m ability • Highly reliable Features • Fast — Uses proven EPROM technology — Commercial: tPD = 15 ns, tco = 10 ns, ts = 12 ns


    OCR Scan     		PDF PLDC20G10B/PLDC20G10 24-Pin 12l10 20V8

    22V10D

    Abstract: VT00
    Text: For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device • High reliability — Proven Flash EPROM technology — 100% programming and functional testing • DIP, LCC, and PLCC available Features


    OCR Scan     		PDF PALCE22V10. PALC22V10D 22V10D VT00

    PALC22V10

    Abstract: 22V10-35 PALC22V10-25dmb PALC22V10-40DMB PALC22V10L35PC PALC22V10 20HC PALC22V10L-25JC PALC22V10-35PC
    Text: PALC22V10 CYPRESS SEMICONDUCTOR • Up to 22 input terms and 10 outputs • High reliability — Proven EPROM technology — 100% programming and functional testing Features • Advanced second-generation PAL architecture • Low power — 55 mA max. “IT


    OCR Scan     		PDF PALC22V10 22V10 LC22V10L-35HC PALC22V10L-35JC PALC22V10L-35PC PALC22V10L-- PALC22V10-- 35JC/J1 PALC22V10-35PC/PI PALC22V10 22V10-35 PALC22V10-25dmb PALC22V10-40DMB PALC22V10L35PC PALC22V10 20HC PALC22V10L-25JC PALC22V10-35PC

    20ra10

    Abstract: bc 457 20RA10-15 PLDC20RA10
    Text: PLDC20RA10 CYPRESS Reprogrammable Asynchronous CMOS Logic Device Features • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ gram inability • Up to 20 input terms • 10 programmable I/O macrocells • Output macrocell programmable as


    OCR Scan     		PDF PLDC20RA10 C20RA10â 35HMB 28-Pin PLDC20RA10â 35LMB 28-Square 35QMB 20ra10 bc 457 20RA10-15 PLDC20RA10

    Untitled

    Abstract: No abstract text available
    Text: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for


    OCR Scan     		PDF PALC22V10D 133-MHz 300-Mil) 24-Lead 28-Lead 24-Lead 28-Square

    palc22v10d programming guide

    Abstract: No abstract text available
    Text: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty


    OCR Scan     		PDF 133-MHz 110-MHz 15-ns 25-ns PALC22V10D-15JC PALC22V10D-15PC PALC22V1OD-15JI PALC22V10D-15PI PALC22V1 OD-15DMB palc22v10d programming guide

    10-25l

    Abstract: 10-35l 20RA
    Text: PLDC20RA10 ~ • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ grammability — I c c max - 80 mA Commercial • Up to 20 input term« • Output macrocell programmable as combinatorial or asynchronous Dtype registered output


    OCR Scan     		PDF PLDC20RA10 300-mil 28-lead 10--35PI 0--35W 10-35D 10-35H 10-35L 10-35Q 10-25l 20RA

    Untitled

    Abstract: No abstract text available
    Text: PLDC20RA10 CYPRESS SEMICONDUCTOR Features • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ grammability • Up to 20 input terms • 10 programmable I/O macrocells • Output macrocell programmable as combinatorial or asynchronous Dtype registered output


    OCR Scan     		PDF PLDC20RA10 300-mil 28-lead 300-M 28-Pin 28-Square

    Untitled

    Abstract: No abstract text available
    Text: — , PLDC20RA10 W CYPRESS Reprogrammable Asynchronous CMOS Logic Device SEMICONDUCTOR Features • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ grammability • Up to 20 input terms • 10 programmable I/O macrocells • Output m acrocell programmable as


    OCR Scan     		PDF PLDC20RA10 28-Pin 300-M

    Untitled

    Abstract: No abstract text available
    Text: Reprogrammable Asynchronous CMOS Logic Device Features • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ grammability • Up to 20 input terms • 10 programmable I/O macrocells • Output macrocell programmable as combinatorial or asynchronous Dtype registered output


    OCR Scan     		PDF 28-Pin 300-M PLDC20RA10

    Untitled

    Abstract: No abstract text available
    Text: PALC22V10 CYPRESS SEMICONDUCTOR Reprogrammable CMOS PAL Device • Up to 22 input terms and 10 outputs • Advanced second-generation PAL architecture • High reliability — Proven EPROM technology • Low power — 55 mA max. “I!’ — 100% programming and functional


    OCR Scan     		PDF PALC22V10 LC22V 30KMB 28-Square 10-30Q 24-Pin 300-M