EQUIVALENT FA 5515 Search Results

bpwb5

Abstract: CB41EL933 KIA6058S KIA6058AS KSC0902 soshin bpf KSFI604
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA6058S/AS BIPOLAR LINEAR INTEGRATED CIRCUIT FM FRONT-END The KIA6058S/AS are designed for a FM front-end application, which are suitable to a portable radio or a radio cassette. Comparing with conventional types, supply voltage dependence, overload characteristics

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA8182FN b ip o la r lin e a r in t e g r a t e d c ir c u it TV /FM SYSTEM FRONT END 1.5V USE The KIA8182FN is TV /FM Front End 1C, which is designed for 1.5V headphone radio. FEATURES • Built-in VHF/FM band front end. FM Mode : 75~109MHz

Contextual Info: T O SH IB A RN4901 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4901 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 ± 0 . 1. 1.25 • Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: T O SH IB A TD62476-479P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62476P, TD62477P, TD62478P, TD62479P 2CH PERIPHERAL AND / NAND I OR / NOR DRIVERS The TD62476P, TD62477P, TD62478P, TD62479P are comprised of two NPN single output stages and control

equivalent fa 5515

Abstract: SE194D SE17XC01S SE099E01S
Contextual Info: CROSS-REFERENCE LIST- m ilitary M IL IT A R Y z PART NUM BER S rV IS 171 21 1 • w |_M 5515 5 /2 9 - 1 CAM BION M IL IT A R Y PART NUMBER PART NUMBER o *-* o Z « « standard m s /m « O CAM BION 160 - 2 0 8 5 160 7552 11 - 0 3 - 0 0 11 - 0 5 - 0 0 ["M S I 7 1 2 2 14

TA8600N

Abstract: trf-1027 trf-1028 trf1027
Contextual Info: TOSHIBA TA8600N PIF AND QUASI-PARRALEL SIF COMBINATION Unit: mm The TA8600N is designed for providing a high performance PIF-SIF combination for a TV and CATV. The SIF section adopts quasi-parralel inter-carrier detection system for a good sound reproduction.

bpwb5

Abstract: 10.7MHZ COIL 5764 Soshin Electric bpwb5 CB41EL933 Soshin Electric Co capacitor Soshin Electric sumida IFT 10.7MHz soshin bpf KSC0902 sumida ift 5764 coil
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA6058F BIPOLAR LINEAR INTEGRATED CIRCUIT FM FRONT-END The KIA6058F is designed for a FM front-end application, which is suitable to a portable radio or a radio cassette. Comparing with conventional types, supply voltage dependence, overload characteristics and spurious

Contextual Info: TOSHIBA 2SB1555 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR i <; r 1 *5 <5 <5 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V q e q = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 2 5°C)

Contextual Info: RN1010,1011 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2010, RN2011 EQUIVALENT CIRCUIT

2SD1294

Abstract: AC73
Contextual Info: TOSHIBA 2SD1294 2 S D 1 294 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER REGULATOR FOR LINE OPERATED TV. • • • • , 2.0 1 5 .9 M A X . . Excellent Wide Safe Operating Area 80 W-s at Tc = 25°C Included Avalanche Diode : Vz = 60±15V

Contextual Info: TO SHIBA TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T• n f i ? 1 f l 7m mP g SILICON MONOLITHIC T» r * f i 7 1■ IMT f l 7m R P mm ■ g Tm n f i 7 i ■n^ur7m Fm 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62107P/BP/F are high-voltage, high-current

47s00

Contextual Info: TO SHIBA TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T• n f i ? 1 f l 7m mP g SILICON MONOLITHIC T» r * f i 7 1■ IMT f l 7m R P mm ■ g Tm n f i 7 i ■n^ur7m Fm 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62107P/BP/F are high-voltage, high-current

Contextual Info: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 149 5 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • 10 +0.3 High DC Current Gain : hFE = 2000 Min. (VCe = -2 V , IC = -2 A ) Low Saturation Voltage : VCE( s a t ) =— (MAX.) (IC = -1.5A )

ICP35

Abstract: horizontal output transistor
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)

Contextual Info: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage

Contextual Info: TO SHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 - 0 . 3 + 0.2 1 . 6 - 0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)

Contextual Info: TOSHIBA TA8246H TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8246H DUAL AUDIO PO W ER AMPLIFIER 6W x2C H The TA8246H is dual power amplifier for Consumer applications. This 1C provides an output power of 6 watts per channel at V Cc = 20V, f = 1kHz, THD = 10%, R l = 8 il

Contextual Info: T O SH IB A RN5006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5006 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4.6MAX. 1.7 MAX. POWER SWITCHING APPLICATIONS. — With Built-in Bias Resistors Simplify Circuit Design

2SC4895

Abstract: A13F
Contextual Info: h ÿ > v 7* $ / I ransistors 9 C C 4 8 Q 5 2SC4895 it ;^ ^ '> 7 ^ U - t lN P N v U 3 > h 7 > y X ^ ^ - U > h > ii Epitaxial Planar NPN Silicon Transistor (Darlington) 1£J§)j£iI2j*ilillffl/Low Freq. Power Amp. • £W2\f'>ilSI/Dimensions (Unit : mm) 1)

g 6551

Abstract: m6551 HM 1211 6551 HM-6551 HM-6551-5 HM-6551-9
Contextual Info: H M -6 5 5 1 O HARRIS 2 5 6 x 4 CMOS RAM Features • • • • • • • • • • • • L o w S ta n d b y P o w e r . 5 0 ^ W M ax. L o w O p e ra tin g P o w e r . 2 0 m W /M H z M ax.

Contextual Info: TOSHIBA TENTATIVE TA8069F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8069 F 4CH LOW SIDE DRIVER TA8069F is built into four Q.5A low-side driver ICs which drive lamp, relay, and solenoid actuators. Inputs from Dll, DI2, DI3, and DI4 switch ON and OFF modes. Inputs

TA8115F

Abstract: HI 17741 TA8115N Q1/toshiba headphone amplifier 7721AN
Contextual Info: T -, oshiba electronic deJ ds tdtvsm 9097247 TOSHIBA. ELECTRONIC ? | o 0 2E 17739 D T-7 7-2.I ITA8115N/F TENTATIVE DUAL PRE-AMPLIFIERS + HEADPHONE DRIVERS FOR AUTOREVERSE SYSTEM IC 3V USE The TA8115N/F are developed for auto reverse play back headphone cassette play (3V use).

Contextual Info: TOSHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2S D2079 HIGH POWER SWITCHING APPLICATIONS. U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. • 10 + 0.3 , ^ 3 .2 + 0.Z Z .7 ± 0 2 High DC C urrent Gain * V iT vm ’

Contextual Info: TA76431 AS T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• A 7 m m a f i Ä ? 1 SILICON MONOLITHIC A m < m ;r « ADJUSTABLE PRECISION SHUNT REGULATOR FEATURES • Precision Reference Voltage V r e f = 2.495 V ± 1% • Small Temperature Coefficient