EQUIVALENT OF 2SD2241 Search Results

Contextual Info: 2SD2241 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm SWITCHING APPLICATIONS • • • 10 +0.3 High DC Current Gain : hjrE = 2000 Min. Low Saturation Voltage : V q e (§at)= 1-5V (Max.) Complementary to 2SB1481 , $ 3.2 ± 0.2 2.7±02

Contextual Info: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241

2SB1481

Abstract: 2SD2241 equivalent of 2sd2241
Contextual Info: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO

transistor 2sd2241

Abstract: 2SB1481 2SD2241
Contextual Info: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • • H igh DC Current Gain : hpE = 2000 Min. CO Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) cn ro o

Contextual Info: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • High DC Current Gain : hpE = 2000 Min. (VCE = -2 V , IC= -1.5A ) Low Saturation Voltage : Vc e (sat)~ —1-5V (Max.) (Iq = —3A) Complementary to 2SD2241

D2241

Abstract: TRANSISTOR D2241 2SD2241 2SB1481
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

TRANSISTOR D2241

Abstract: D2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

B1481

Abstract: 2SB1481 2SD2241 2SB148
Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

B14-81

Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

D2241

Abstract: TRANSISTOR D2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)

D2241

Abstract: TRANSISTOR D2241 2SB1481 2SD2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)

B1481

Abstract: 2SB1481 2SD2241
Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

2SB1481

Abstract: 2SD2241
Contextual Info: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -1.5A ) Low Saturation Voltage : Vq^ (sat)“ —1.5V (Max.) (I0 = —3A)

2SB1481

Abstract: 2SD2241 T32001
Contextual Info: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including