EQUIVALENT TRANSISTOR UM 66 Search Results

Contextual Info: M ITSUBISHI RF POW ER MODULE M57764 8 0 6 —8 2 5 M H z , 2 0 W , FM FOR MOBILE RADIO APPLICATION DESCRIPTION M 57764 is a thick film OUTLINE DRAWING RF power module specifically designed for 8 0 6 ~ 8 2 5 M H z , 15W FM mobile radios. 66 • 1 60 • I FEATURES

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

siemens dioden

Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
Contextual Info: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .

of mosfet BUZ 384

Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Contextual Info: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range

ci 740

Abstract: ci740 germanium transistor pnp XBI03 germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf
Contextual Info: E D ISW A N MAZDA XBI03 L.F. T R A N S IS T O R Germanium PN P Junction Type _ T E N T A T IV E GENERAL The X B I0 3 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the transistor is hermetically sealed in a small can.

transistor B9C

Abstract: B9C transistor
Contextual Info: M ay 1998 MÉL Micro Linear ML4751 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4751 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The m axim um switching frequency can exceed

B3604

Contextual Info: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.

18ph diode

Abstract: ICS08
Contextual Info: July 1996 P R E LIM IN A R Y MgLMicro Linear ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low power boost regulator designed for low voltage D C to D C conversion in single cell battery powered systems. The m axim um switching frequency can

Mextram

Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Contextual Info: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­

Contextual Info: July 1998 Micro Linear ML4950 Adjustable Output, Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4950 is a low power boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um switching frequency can

L4850

Contextual Info: July 1998 % M ic ro Linear ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low power boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um switching frequency can

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

Contextual Info: M ay 1998 fo ri . ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low pow er boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um sw itchin g frequency can

Contextual Info: July 1996 P R E LIM IN A R Y MÉLMicro Linear ML4950 Adjustable Output, Low Current Single Cell Boost Regulator with Detect GENERAL D ESCRIPTION FEATURES The M L49 5 0 is a low pow er boost regulator designed for low voltage D C to D C conversion in single cell battery

Contextual Info: July 1996 PR E LIM IN A R Y MgLMicro Linear ML4771 High Current Boost Regulator GENERAL D ESCRIPTIO N FEATURES The M L4771 is a continuous conduction boost regulator designed for D C to D C conversion in m ultiple cell battery powered systems. Continuous conduction allo w s the

Contextual Info: MgL Micro Linear July 1996 ML4775 Adjustable Output Low Voltage Boost Regulator with Shutdown G EN ERA L D ESCRIPTIO N FEATURES The M L4775 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The co m b in a tio n of BiCMOS process technology, internal

X I TRANSISTOR 6 PIN

Abstract: sMT6
Contextual Info: Transistor, digitai, dual, with resistors, 6-pin package Transistor, digital, dual, with resistors, 6-pin package These ROHM packages consist of various pairs of digital transistors in a single 6-pin UMT6 UM6 or SMT6 (IMD, SC-74) package. Each package consists of two independent digital

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

Contextual Info: A pril 1998 PRELIMINARY MgL Micro Linear ML4769 2 Cell, Adjustable Output Boost Regulator with Load Disconnect GENERAL DESCRIPTION FEATURES The M L4769 is a continuous conduction boost regulator designed fo r DC to DC conversion in m ultiple cell battery pow er systems. C ontinuous conduction allows the

tag 8833

Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
Contextual Info: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer

TDA1054

Abstract: TDA 1054 M tda 486 ic data TAPE RECORDER bias ac din hfe nv riaa preamplifier circuit diagram DUAL PRE-AMPLIFIER FOR TAPE RECORDER DUAL PREAMPLIFIER WITH ALC XR88C681P/28-F ALC Automatic Level Control
Contextual Info: TDA1054 LINEAR INTEGRATED CIRCUIT PRELIMINARY DATA PREAMPLIFIER FOR CASSETTE RECORDERS WITH ALC • • • • • • E X C E LLE N T V E R S A T IL IT Y in USE V s fro m 4 to 20V HIG H OPEN LOOP G AIN LOW D ISTO R TIO N LOW NOISE LAR G E A U T O M A T IC L E V E L C O N TR O L RANGE

ac cdi schematic diagram

Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
Contextual Info: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing

Manchester c source code using PIC

Abstract: rfid attendance system ask fsk psk CB10 MCRF200 MCRF355 MCRF450 RFID FSK RFID reader SOURCE CODE microchip
Contextual Info: Not recommended for new designs. Please use MCRF355 or MCRF450. MCRF200 125 kHz microID Passive RFID Device Features Package Type • Factory programming and memory serialization SQTPSM • One-time contactless programmable (developer kit only) • Read-only data transmission after programming