ER1602 Search Results

Contextual Info: ER1600CT – ER1606CT WTE POWER SEMICONDUCTORS 16A SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability

Contextual Info: DATA SHEET ER1600CT~ER1604CT SUPERFAST RECOVERY RECTIFIER VOLTAGE 50 to 400 Volts TO-220AB 16.0 Amperes CURRENT Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound.

Ss1015

Abstract: s40d40c
Contextual Info: PRODUCT SELECTION GUIDE Power Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Schottky Rectifiers 8 SMD 8 Axial Lead 14 Power-pack 16 Superfast Rectifiers 20 SMD 20 Axial Lead 22 Power-pack 23 Ultrafast Rectifiers

Contextual Info: SENSITRON SEMICONDUCTOR



 

         
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ER1606CT

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ER1600FCT

Abstract: ER1606FCT ITO-220 tube oscilloscope 150 er1603fct ER1604FCT
Contextual Info: ER1600FCT – ER1606FCT WTE POWER SEMICONDUCTORS 16A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability

ER1602

Abstract: ER1600 ER1601 ER1601A ER1603 ER1604 tj-2 94vo
Contextual Info: ER1600 THRU ER1604 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 400 Volts CURRENT - 16.0 Amperes FEATURES l TO-220AB Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l Exceeds environmental standards of MIL-S-19500/228

ER1606CT

Abstract: ER1602CT 16GT
Contextual Info:
SENSITRON SEMICONDUCTOR FEP16AT-FEP16JT
        
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ER1604FCT

Abstract: ER1600FCT ER1606FCT ITO-220 ER1602
Contextual Info: WTE POWER SEMICONDUCTORS ER1600FCT – ER1606FCT Pb 16A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

ER1600DC

Abstract: ER1604DC
Contextual Info: ER1600DC – ER1604DC WTE POWER SEMICONDUCTORS 16A D2PAK SURFACE MOUNT SUPER FAST RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Profile Package High Surge Current Capability Low Power Loss, High Efficiency

er1602

Abstract: er1604
Contextual Info: DATA SHEET ER1600 ~ ER1604 SUPERFAST RECOVERY RECTIFIERS TO-220AC 16 Ampers FEATURES Unit : inch mm .419(10.66) .196(5.00) .387(9.85) .163(4.16) .139(3.55) MIN - Plastic package has Underwriters Laboratory Flamability .054(1.39) .269(6.85) .045(1.15) Classification 94V- 0. Flame retardant epoxy molding compound.

16DT

Abstract: 16GT FEP16GT
Contextual Info:
SENSITRON SEMICONDUCTOR FEP16AT-FEP16JT
        
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ER1002FCT equivalent

Abstract: ER1602CT SF1603G SF1604 sf53 ER1602 SF1002G sf1004g SF12 SF13
Contextual Info: SUPER FAST RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

er1602fct

Contextual Info: WTE POWER SEMICONDUCTORS ER1600FCT – ER1606FCT Pb 16A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER Features Glass Passivated Die Construction B Super-Fast Switching Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

er507

Abstract: 5030c sf16 SR1635C ER1602C sr52
Contextual Info: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SCHOTTKY BARRIER RECTIFIERS V \ j y p e n 5 :— lo |A l\ 20 30 35 40 45 50 60 C A SE _ 1.0 1N17 1N18 - 1N19 - - 1.0 1S20 1S30 - 1S40 - 1S50 1S 60 1.0 1N5817 1N5818 - 1N5819 - - - 1.0 SR120 SR 1 30 S R I 40

1604FCT

Abstract: 1604f ER1602 ER1600 ER1600FCT ER1601 ER1601A ER1603 ER1604
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company ISOLATION SUPERFAST RECOVERY RECTIFIER ER1600FCT-1604FCT ITO-220AB FULLY MOLDED PLASTIC PACKAGE Absolute Maximum Ratings Ratings at Ta=25oC Ambient Temperature unless otherwise specified.

ER1606FCT

Abstract: ER1606FC
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K 1603 to-220

Abstract: ER1602CT 1602CT 1604CT ER1600CT ER1606CT er1604ct
Contextual Info: ER1600CT – ER1606CT WTE POWER SEMICONDUCTORS 16A SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability

HER601

Abstract: HER602 HER603 HER604 HER605 HER801 HER802 HER803 HER804
Contextual Info: •_ I V H h O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° C to + 1 7 5 ° c M axim u m Peak Reverse Voltage M a xim u m Average Rectified Current @ Half-Wave Resistive Load 60Hz M axim u m Forward Peak Surge Current @ 8.3m s Superim posed

Contextual Info: ER1600CT – ER1606CT WTE POWER SEMICONDUCTORS Pb 16A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER Features  Glass Passivated Die Construction      Super-Fast Switching Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability

P6K36

Abstract: DI158S diode gs1j 5KE91C smd diode gs1g MMBD148 1N47446A P6K7 smd diode sk14 DI108S
Contextual Info: GLASS PASSIVATED JUNCTION RECTIFIER GENERAL PURPOSE RECTIFIER PRV V TYPE NO 50 100 200 400 600 800 1000 1A7G PACKAGE Io(A) 1.0 1A1G 1A2Gg 1A3G 1A4G 1A5G 1A6G 1.0 1N4001GS 1N4002GS 1N4003GS 1N4004GS 1N4005GS 1N4006GS A-405 R-1 1.0 1N4001G 1N4002G 1N4003G 1N4004G

ER1604CT

Contextual Info: ER1600CT – ER1606CT 16A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Superfast 35nS and 50nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current