ERSE RDS 80 Search Results

SP 5001 IC

Abstract: smd diode Uj diode 5004 DIODE SMD CE SMD5001
Contextual Info: SEMTECH CORP 2IE D DODSBST 1 - 3 BEMTECH CORPORATION ^ MICROELECTRONICS DIVISION SMD SMD SMD SMD 2 N-Channel Power MOSFETs, IN HERMETIC ISOLATED PACKAGE Ideally suited for applications such as switching power supplies, motor controls, inverters, choppers,

Contextual Info: SOLITRON DEVICES INC bl D E I fl3bflt,D2 DD0D327 NO.: S0T84A Devices, Inc. S P E C I F I C A T I O N S 1 f T- 3 9 - 1 3 TYPE: POWER M O S F E T N-CHANNEL CASE: T O -3 MAXIMUM RATINGS . 800 V Drain Current, Continuous 0 Tc • 25°C .

1C00

Abstract: 2SK805
Contextual Info: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n

2SK1255

Contextual Info: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n

Contextual Info: SOT23 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4106F ISSUE 2 – DECEMBER 1995 PARM ARKING DETAIL - MZ S D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e V DS 60 V Contin uo us Dr ain Cur r en t at T am b=25°C

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =2Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 60 V Contin uo us Drain Cur r en t at T am b=25°C

YTFP250

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =3Ω * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e

ZVN3310A

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN3310A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 10Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold D G APPLICATIONS * Telephone handsets S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT

Contextual Info: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110G ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED D S PARTMARKING DETAIL COMPLEMENTARY TYPE - D ZVN2110 ZVP2110G G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN0124A ISSUE 1 – M ARCH 94 FEATURES * 240 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 4Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C

2SK1257

Abstract: contact id converter
Contextual Info: Power F-MOS FET 2SK1257 2SK1257 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R Ds on : R ds (on) l = 0 . 0 2 4 i l (ty p .) Unit: mm • H igh sw itch in g r a te : t<= 3 2 0 n s (ty p .) • N o s e c o n d a ry b reak d o w n

2SK1257

Abstract: SS3200 TF320
Contextual Info: P o w er F-MOS FET 2SK1257 2S K 1257 Silicon N-channel Power F-M O S F E T • Features ■ Package Dimensions • Low ON r esista n ce Rus on : R DS (on) l = 0 .0 2 4 il (typ.) Unit: mm • H igh sw itch in g r a te : t f= 3 2 0 n s (ty p .) • No s e c o n d a ry b reak d o w n

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN3306A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDSon =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 60 V Contin uo us Drain Cur r en t at T am b=25°C

NF C 93-400

Abstract: 2SK1944-01 SC-65 A2297
Contextual Info: 2SK1944-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • l ow on-resistance • No secondary breakdown • l ow driving power • High voltage • V gs = ±30V Guarantee • Avalanche-proof

IRF140

Contextual Info: PR ELIM IN A R Y T M SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 28 AMP 100 VOLT 0.077 a N-CHANNEL POWER MOSFET Designer’s: Data: Sheet FEATURES: • • • • • • •

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET . » TYPE NAME : 2SK2808-01 MR SPËC. NO, Fuji Electric Co.,Ltd. T his Specification is subject to c h a n g e w ithout notice. DATE ' NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED - 1 DWG. NO. DRAW N /

Contextual Info: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage

2SK963

Abstract: 2SK9
Contextual Info: 2SK963 Power F-MOS FET 2SK963 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R us on : R ds (on) = 0 .4 5 i l (ty p .) • High sw itc h in g r a te : t f = 4 5 n s (ty p .) • No se c o n d a ry b reak d o w n

2SK1030

Abstract: 2SK1030A
Contextual Info: Power F-MOS FET 2SK1030, 2SK1030A 2SK1030, 2SK1030A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON r e s is ta n c e R ds on : R ds (on) = 3 .0 f i (ty p .) Unit: mm • H igh sw itch in g r a te : ti = 4 0 n s ( ty p .)

2SK1214

Abstract: 5N60 bt353 bt353s5 H3228
Contextual Info: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n