ESAC83M Search Results

20A60V

Contextual Info: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAC83M-004R

Contextual Info: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain

Contextual Info: ESAC83M-006 2 oa SCHOTTKY BARRIER DIODE : Features -f • i & w i t *'• Insulated p ac ka g e b y fully m o l d in g . • ®VK L o w Vk 3£c Connection Diagram S u p e r h ig h speed s w itc h in g . H ig h reliability by pla n e r d e s ig n , ■ E 3 i£ : Applications

SCHOTTKY 20A 40V

Contextual Info: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

SCHOTTKY 20A 40V

Contextual Info: ESAC83M-004 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

004r

Abstract: SCHOTTKY 20A 40V ESAC83M-004R esaC83
Contextual Info: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAC83M-004

Contextual Info: ESAC83M-004 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

Contextual Info: ESAC83M-006 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

Contextual Info: http://www.fujisemi.com ESAC83M-006RR FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current

ESAC83M-006R

Abstract: HIS 06 N
Contextual Info: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain

ESAC83M-006

Contextual Info: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • Connection Diagram i= * i' Super high speed sw itching. • ~ f l '—t *B1£

SCHOTTKY 20A 40V

Abstract: ESAC83M-004
Contextual Info: ESAC83M-004 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAC83M-006

Abstract: esac83
Contextual Info: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • i= * i' C o n n e c tio n D ia g ra m Super high speed sw itching. • ~ f l '—t

Contextual Info: ESAC83M-006 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAC83M-006R

Contextual Info: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

ESAC83

Abstract: A496 ESAC83M-004 T151 T460 T760 T930 OOPK
Contextual Info: E S A C 8 3 M - 0 0 4 I20A /<X) T & ' i ' X —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # ^ : Features mkznt-7)\'*-)vY*47 • Insulated package by fully m o ld in g . • te V F rnmmrnm Connection Diagram Low V f S uper high speed sw itch in g .

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

fi 06

Abstract: ESAC83M-006
Contextual Info: E S A C 83M -006 2 oa ' >3- yh+— K SCHOTTKY BARRIER DIODE • : Features Insulated package by fully m o ld in g . • 1&Vh m m &m Low V K Connection Diagram Suoer high speed sw itching. • y U'-t - itfffcisaflrfan High reliability by planer design, : Applications

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04