ESAC87 Search Results

Contextual Info: ESAC87-009 16A (90V / 16A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching

IR LFN

Abstract: 3gk5 H11R LFN ir
Contextual Info: ESAC87M-009H6A i s a ' y h + — ✓ < x) 7 ¥ ^ : Outline Drawings — K SCHOTTKY BARRIER DIODE : Features JEDEC Insulated p ac ka g e by fully m o l d in g . EIAJ Low V f Connection Diagram Super high speed sw itchin g. H igh reliability by planer design.

ESAC87M-009R

Contextual Info: ESAC87M-009R 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 ±0.3 1.6 ±0.3 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3

ESAC87-009

Abstract: SC-65
Contextual Info: ESAC87-009 16A (90V / 16A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching

PR42

Contextual Info: ESAC87-009 16A (90V / 16A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching

ESAC87-009

Abstract: SC-65 T930 A472 J13M
Contextual Info: ESAC87-009d 6A SC H O T T K Y B A R R IE R DIODE • $ N I : Features • «Ve Low V F • x-r c a t» Super high speed switching. ■ W H M ft Connection Diagram High reliability by planer design t : Applications • *a«*X 4 *y*> 7 High speed power switching.

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

Contextual Info: ESAC87M-009R 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 ±0.3 1.6 ±0.3 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3

a473

Abstract: A472 A-473 ESAC87-009 SC-65
Contextual Info: ESAC87-009H6A i Outline Drawings SCH O TTKY BARRIER DIODE ^3.2±o ' 15 . 5 maj 13.0 , r" i 5iC * H JU -2.0 / ! T.Zto 1 ' S f- m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

Contextual Info: ESAC87M-009 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 ±0.3 1.6 ±0.3 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3

Contextual Info: ESAC87-009 16A s±']'tA^-K SCHOTTKY BA R R IE R DIODE • ¡ tr H t: Features • te V F Low VF Super high speed sw itchin g. m m m m m • T V -* -ftifjC J rS S fifS te C on nection D iagram H igh reliability by planer design. : A p p lica tio n s r + H

schottky diode 16a

Contextual Info: ESAC87M-009 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 ±0.3 1.6 ±0.3 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3

H2812

Abstract: ESAC87M-009R
Contextual Info: ESAC87M-009R 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 5.45 ±0.2 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 20 Min 1.6 ±0.3 1.1 —0.1 Features ±0.3 21.5 5.5 ±0.2 2.3 ±0.2

Contextual Info: ESAC87-009 16A (90V / 16A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching

ESAC87M-009

Abstract: diode schottky 16A
Contextual Info: ESAC87M-009 16A (90V / 16A ) Outline drawings, mm 15.5 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC Insulated package by fully molding Low VF 3.2 +0.3 ±0.3 1.6 ±0.3 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3

a476

Abstract: T3D DIODE ESAC87M-009 ESAC87M-009H6A esac87
Contextual Info: ESAC87M-009H6A v 'a 'y M 1— s< t —K SCHOTTKY BARRIER DIODE • f t # I Features Insulated package by fully m o ld in g . • te V F IWS&fft Low V f Connection Diagram Super high speed sw itchin g. H igh reliability by planer design. : Applications H igh speed pow er sw itchin g.

Contextual Info: ESAC87-009 16A (90V / 16A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

A475 DIODE

Abstract: a476 A475 a475 C ESAC87M-009 T151 T460 T760 T810
Contextual Info: E S A C 8 7 M - 0 0 9 n 6A '>3'yHr—s< V T ÿ ' f ï —K SCHOTTKY BARRIER DIOC • f t # : Features Insulated package by fully m olding. • ftV p m um &m Connection Diagram Low VF Super high speed switching. High reliability by planer design. r- W c

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004