ESSD Search Results

acmd41

Abstract: ISO7816-1 Transcend ESSDC128 ESSDC256 ESSDC512 ESSDC64
Contextual Info: 64MB/128MB/256MB/512MB Secure Digital Card Description Features Operating Voltage: 2.7V ~ 3.6V ESSDC64 / ESSDC128 / ESSDC256 Operating Temperature: -25℃ ~ / ESSDC512 are different memory 85℃ capacities from 64MB to 512MB of the Data Transfer Rate: Average 2MB/s

SK6626

Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
Contextual Info: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP

Contextual Info: 1/3 Serial ATA 3Gbps Compatible One Package Solid State Drive eSSD Series 1GB to 4GB Conformity to RoHS Directive TDK's SSD Controller IC GBDriver RS3 and SLC NAND-type flash memory have been integrated into one package through multi-chip packaging (MCP) technology, providing

TDK eSSD

Abstract: eSSD 512MB-2GB GBDriver
Contextual Info: ESEC-04 A1 594mmx841mm TDK 1パッケージSiP eSSDシリーズ 512MB~2GB TDK One Package SiP Module eSSD 512MB∼2GB ESEC-04 参考出品 NANDフラッシュとコントローラを1パッケージ化(SSD) TDK SiP（システムインパッケージ）

Contextual Info: TDK FLASH STOR STORAGE AGE DATA SHEET eSSD SATA 3Gbps SSD Device ERS3S Series Merging Memory and Intelligence “eSSD” The adoption of solid state drives SSDs as storage devices that substitute and complement HDDs is rapidly increasing for various electronic devices. The memory

Contextual Info: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new

LM7701

Contextual Info: LM7705 Low Noise Negative Bias Generator General Description Features The LM7705 is a switched capacitor voltage inverter with a low noise, −0.23V fixed negative voltage regulator. This device is designed to be used with low voltage amplifiers to enable the amplifiers output to swing to zero volts. The −0.23

4 BIT 2 INPUT MULTIPLEXER

Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
Contextual Info: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew

lm 7803

Abstract: bsim3 bsim3 model bsim3 circuit model
Contextual Info: RF-Distortion in Deep-Submicron CMOS Technologies R. van Langevelde, L.F. Tiemeijer, R.J. Havens, M.J. Knitel, R.F.M. Roes, P.H. Woerlee and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2743926; Fax: +31-40-2743390; E-mail: ronald.van.langevelde@philips.com

lm 7803

Abstract: gmob thesis
Contextual Info: Proc. IEEE 2001 Int. Conference on M icroelectronic T est Structures, Vol 14, M arch 2001. 141 5.3 Efficient Parameter Extraction Techniques for a new Surface-Potential-Based MOS Model for RF Applications Wenzhi Liang, Ronald van Langevelde, K.G. McCarthy, A. Mathewson

IG754-24

Contextual Info: G7 5 6 / U 3 6 0 M/B PAGE 1 : THIS PAGE 2 : CPU BOARD CONN PAGE 3: CLK GEN. PAGE 4: INTEL MTXC PAGE 5: DRAM PAGE 6: SRAM PAGE 7: DIM SOCKET PAGE 6: INTEL P I 1X4 PAGE 9! CDROM& HDD CONN. PAGE 10 D A M P I N G RES. PAGE 11 NMG4 PAGE 12 CR T & L C D DAMPING-RES.

BCD8

Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
Contextual Info: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,

PCL6025

Abstract: PCL6025B as15 G CU4R as15 h PCL6045B PLC6025B CP5X as15 fa sd pcl6045
Contextual Info: User's Manual For PCL6025B Pulse Control LSI Nippon Pulse Motor Co., Ltd. [Preface] Thank you for considering our pulse control LSI, the "PCL6025B." To learn how to use the PCL6025B, read this manual to become familiar with the product. The handling precautions for installing this LSI are described at the end of this manual. Make sure to read

MCR 22-8 transistor power

Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
Contextual Info: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.

megacore

Abstract: V101
Contextual Info: SDI MegaCore Function Errata Sheet August 2006, MegaCore Function Version 1.0.1 This document addresses known errata and documentation issues for the SDI MegaCore function version 1.0.1. Errata are functional defects or errors, which may cause the SDI MegaCore function to deviate from

Contextual Info: LM7705 www.ti.com SNVS420B – NOVEMBER 2008 – REVISED MARCH 2013 LM7705 Low Noise Negative Bias Generator Check for Samples: LM7705 FEATURES DESCRIPTION 1 • • • • • • • • • • • 2 Regulated Output Voltage −0.232V Output Voltage Tolerance 5%

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AOI21

Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter
Contextual Info: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew

Large-signal Modeling of SiGe HBT for PA Applications

Contextual Info: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan

Contextual Info: LM7705 www.ti.com SNVS420B – NOVEMBER 2008 – REVISED MARCH 2013 LM7705 Low Noise Negative Bias Generator Check for Samples: LM7705 FEATURES DESCRIPTION 1 • • • • • • • • • • • 2 Regulated Output Voltage −0.232V Output Voltage Tolerance 5%

usb/ps2 keyboard controller

Abstract: PS2 Series connector electrical engineering projects mechanical engineering project usb keyboard encoder MOLEX ps2 ps2 keyboard EN61000-4-3 R6C13 2200-FK000
Contextual Info: 2200 Keyboard for public environments. Application / Engineering Manual USA OFFICE 364 Pennsylvania Avenue, Suite 202 Glen Ellyn Illinois 60137 USA Tel +1 630 469 2981 www.keymat.com UK OFFICE 14 Bentinck Court, Bentinck Road, West Drayton UB7 7RQ ENGLAND

MCR 22-8 transistor power

Abstract: operation of sr latch using nor gates 2 bit magnitude comparator 0N80 half adder 74 on 5295 transistor carrier A022H AOI21 AOI211 10146 1987
Contextual Info: Order this data sheet by HDC/D 2 5 1991 MOTOROLA HDC SERIES SEM ICONDUCTO R TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS B u ilt o n a 1.0 m ic ro n , tr ip le - la y e r metal C M O S p ro ce ss, th e HDC S eries re p re se n ts a s ig n ific a n t a d v a n c e m e n t in m ic ro c h ip te c h n o lo g y .

EN61000-4-3

Abstract: locknut KEYPAD encoder 5v rs232 14 Buttons Keypad Matrix
Contextual Info: 6000 Series Keypads Numeric data entry in exposed public environments • Rugged, reliable and responsive data entry • 4 row x 4 column matrix circuit format • Vandal resistant 20J BS EN 60068-2-75: 1997 • Optional USB or PS2 encoded interface circuit (enclosed in water

Contextual Info: SDI MegaCore Function Errata Sheet May 2006, MegaCore Function Version 1.0.0 This document addresses known errata and documentation issues for the SDI MegaCore function version 1.0.0. Errata are functional defects or errors, which may cause the SDI MegaCore function to deviate from