EST003 Search Results

Contextual Info: eSE Series APPLICATION NOTES eSE/eST IDE Updated to V1.7 Notes Document Number : Date of Issue : Issue Version : Supported Chips : Applicable Software : AP-eSE-0005E-V2 20 June 2007 2 eST003~ eST341, eSE003 ~ eSE080 eSTE IDE, version 1.7 1.0 eST/eSE Serial IDE Update to V1.7

mouse wheel

Contextual Info: eSTE Series APPLICATION NOTES eST/eSE eST/eSE IDE Updated to V2.0 V2.0 Notes Document Number : Date of Issue : Issue Version : Supported Chips : Applicable Software : AP-eSTE-0005E-V5 12 May 2010 5 eST003~ eST341, eSE003 ~ eSE080 eSTE IDE, version 2.0 1.0 eST/eSE Serial IDE Update to V2.0

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

MR0D08B

Contextual Info: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

Contextual Info: MR0A16A FEATURES • • • • • • • • • 64K x 16 MRAM Memory 3.3 Volt power supply Fast 35ns read/write cycle SRAM compatible timing Unlimited read & write endurance Commercial, Industrial, and Extended Temperatures

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

ese040

Abstract: eST040 9944 ir receiver eST010 EST030 eST020 npn 8050 EM55000-2 EST081 eST003
Contextual Info: eST/eSE Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 1.4 Applicable to eST/eSE IDE Version 1.4 & later ELAN MICROELECTRONICS CORP. August 2009 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM.

footprint jedec Mo-119

Abstract: MR256A08BCMA35R
Contextual Info: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

MR25H10CDC

Abstract: mr25h10mdc MR25H10 AEC-Q100 dfn tray 5 mm x 6 mm
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

aec-q100 package

Abstract: MR4A16BCYS35R
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

eSTM060

Abstract: EM55450 em55 RM EMK EM55M450 EM55Q450 EM73MA89B Q060 EM55300
Contextual Info: MTP Writer System for EM55M450/Q450 eSTM060/Q060 EM73MA89B EM55M300 USER’S GUIDE Applicable to MTP Writer Driver Version 3.5 & later Doc. Version V1.2 ELAN MICROELECTRONICS CORP. January 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM.

BGA Package 0.35mm pitch

Abstract: 48BGA MR4A16B
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR4A16BCYS35

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

eST010

Abstract: eST020 eST003 eST251 eSTM060 EST081 eST040 eSTM060H QFP44 eST171
Contextual Info: EASY SOUND eST Series Tiny Controller-Based Speech Synthesizer Product Specification DOC. VERSION 1.2 ELAN MICROELECTRONICS CORP. December 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

MR4A08B

Abstract: BGA Solder Ball 0.35mm MR4A08BC MR4A08BM
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

Contextual Info: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

footprint jedec Mo-119

Abstract: fBGA package tray
Contextual Info: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

M25H1

Abstract: Everspin Technologies
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages