ETR1126 Search Results

XP162A12A6PR

Contextual Info: XP162A12A6PR-G ETR1126_003 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP162A12A6PR

Abstract: p-channel mosfet sot89 5V
Contextual Info: XP162A12A6PR ETR1126_001 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

P-channel Power MOSFET with low on-state resistance

Abstract: XP162A12A6PR
Contextual Info: XP162A12A6PR-G ETR1126_002 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

p-channel mosfet sot89 5V

Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low