EUPEC DD 53 S 1200 K Search Results

DD 127 D

Abstract: dd 127 dd 127 d EUPEC DD 31 800 DD 127 EUPEC DD 31 N 1200 k EUPEC DD 53 s 1200 k DD 53 S 1200 K
Contextual Info: EUPEC 4^E D 3 ^ 3 3 3 1 7 0 0 0 0 1 1 1 Sfl? • Fast diode modules Type V RRM •f r m s m •f s m / i zdt 10 ms, 10 ms, tv, tv[ max tvj max tvj max If a v m ^ c V TO = UPECT ^ S - ö f fT Ir m tvj = tv j = t VJ m ax tv j max - d i/d t R th C K tv) max

DD 127 D

Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
Contextual Info: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K

68A76

Abstract: AI2O3
Contextual Info: EUPEC blE D • 3403217 ÜGGlSflfi fl32 « U P E C DD 45 S Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzenspannung non repetitive peak

EUPEC DD 53 s 1200 k

Contextual Info: EUPEC D D 4 5 tilE D m 3 4 0 3 2 T 7 O O O lE ô fl Ô 32 • iU P E C S Elektrische Eigenschaften Electrical properties H ö c h s tz u lä s s ig e W e rte M a x im u m ra ted v a lu e s m P e rio d is c h e S p itz e n s p e rrs p a n n u n g re p e titiv e p e a k re v e rs e

Contextual Info: EUPEC blE D • SMOaST? OOOllMT 101 « U P E C TT 32 F, TD 32 F, DT 32 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

EUPEC TT 25 N 12

Contextual Info: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state

EUPEC TT 56 n 12

Abstract: EUPEC TT 56 n 16 TD 42 F eupec TD 42 F 10 td-42 f 04 EUPEC TD 42 EUPEC DD 53 s 1200 k TSM 123 EUPEC TD 56 N 08 EUPEC tt 25 N 12
Contextual Info: blE T> EUPEC m 34032^7 000115b 341 « U P E C TT 42 F, TD 42 F, DT 42 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V

EUPEC DD 53 s 1200 k

Abstract: DD 53 S 1200 K EUPEC tt 95 n
Contextual Info: EUPEC tilE T> MM 34D3ET7 0D0114'] 1G1 « U P E O TT 32 F, TD 32 F, DT 32 F Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Vorw ärts- und Rückwärts-Spitzensperrspannung repetitive peak forw ard off-state

FS75R12KS4

Abstract: SIGC121T120R2CS infineon igbt die 1200V
Contextual Info: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V

Contextual Info: SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CS2 VCE ICn 1200V 15A This chip is used for:

FP25R12

Contextual Info: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:

Contextual Info: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:

FS100R12KS4

Contextual Info: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

c828 npn transistor datasheet

Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES