F 1540 SB Search Results

SCHOTTKY semikron

Contextual Info: SBH 1520 . SBH 1540 .3 Axial lead diode High temperature schottky barrier diodes SBH 1520 . SBH 1540 Forward Current: 15 A Reverse Voltage: 20 to 40 V Features                    !"#$       

MUR1560R

Abstract: RUR1550 RUR1560 UR1550 MUR1550
Contextual Info: H SbE D • A R R M U R 1540 M UR1550 M UR1560 IS IHAS 4 3 G 2 27 1 D G M 2 3 5 3 STT R U R 1540 RUR1550 RUR1560 ‘15A Ultrafast Diode With Soft Recovery Characteristic M ay 1991 HA RR IS S E I H C O N D SE CT OR re a iu re s X 'O P ackage -ò -n TO-220AC

RUR1560

Abstract: MURI560 RUR15100 RUR1550 Diode MUR1560 RUR1540 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
Contextual Info: 2 HARRIS SbE D • 4 3 02 2 7 1 0 0 4 2 3 5 3 5TT ■ M U R 1540 MUR1550 HAS M U R 1 5 6 0 15A Ultrafast Diode With Soft Recovery Characteristic May 1991 HARRIS SEMICOND SECTOR - re a iu re s Package TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic

332h

Abstract: SEGMENT DISPLAY 312H UASM66 32.768K E 575
Contextual Info: SH67L18A 8K 4-bit Microcontroller with LCD Driver Features „ SH6610C-based single-chip 4-bit microcontroller with LCD driver „ ROM: 8K X 16 bits bank switched „ RAM: 1024 X 4 bits (system control register, bank switched data memory & LCD RAM) „ Operation Voltage Range: 1.2V - 1.7V

Contextual Info: SH66L16 16K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 16K X 16 bits bank switched RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) Operation Voltage Range: 1.2V - 1.7V

33dh

Abstract: reliability VP5 329H 332h 339H SEGMENT DISPLAY 312H btm 180 316H
Contextual Info: SH66L16 16K 4-bit Microcontroller with LCD Driver Features „ SH6610C-based single-chip 4-bit microcontroller with LCD driver „ ROM: 16K X 16 bits bank switched „ RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) „ Operation Voltage Range: 1.2V - 1.7V

Contextual Info: SH66L16A 16K 4-bit Low Power Micro-controller with LCD Driver Features SH6610C-based single-chip 4-bit micro-controller with LCD driver ROM: 16K X 16 bits RAM: 2016 X 4 bits - 32 System Control Register - 1872 Data Memory - 448 bits LCD RAM Operation Voltage:

lcd 5421

Abstract: IEC-60825 laser transmitter 1550 nm RIN
Contextual Info: Data Sheet October 2001 3970-Type 1550 nm Transmitter Description The 3970-type, externally modulated 1550 nm transmitter provides CATV systems integrators one of the fastest and easiest paths to customer value-added, high-performance solutions. The 1550 nm transmitter engine incorporates a

2SA1301 TOSHIBA

Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213
Contextual Info: 74 - w. € tt Manuf. T y p e No. 2SB 1507 2SB 1508 2 SB 1509 2SB 1510 2SB 1511 = W H # H £ = n h # 2SB 1512 O — A 2 SB 1513 □ — A 2 SB 1514 □— 2SB 1515 □ — A 2 SB 1516 2 SB 2 SB . H ^ SANYO 2SBS27 1527 2SB 1528 2 SB 1529 2SB1439 2SB1433 2SA1761

Contextual Info: M X * C O M , IN C . • MX503 SEQUENTIAL TONE ENCODER FEATURES • CMOS Low Power Requirements • No External Prefilters Needed • OdB Signal to Noise Performance • >30dB Dynamic Range • 25 ms Typical Response Time • Quadradecimal Throughput • Automatic Repeat Tone Translation

SB 1540 Diode

Abstract: f 1540 SB
Contextual Info: SB 1520 . SB 15100 Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520 . SB 15100 Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage

Contextual Info: CYM1540 y SEMICONDUCTOR 256K x 9 Buffered SRAM M odule with Separate I/O Features Sm all PCB footprint • H igh-density 2-m egabit SRAM m odule w ith parity — 1.6 sq. in. • H igh-speed C M O S SRAMs — Access tim e o f 30 ns • Buffered a d d ress an d control inputs

MUR3040PT

Abstract: MUR3050PT MUR3060PT RURD1540 RURD1550 RURD1560 2774.1 RUR01560
Contextual Info: M UR3040PT M UR3050PT M UR3060PT HARRIS • H3QE271 0G424G7 ñb3 I IHAS HARRIS SEMICOND SECTOR 15A Ultrafast Dual Diode With Soft Recovery Characteristic 5bE D May 1992 • r - ; 2. 3 - 0 7 Package Features RURD1540 RURD1550 RURD1560 TO-218AC TOP VIEW U ltrafast w ith S o ft R eco very C haracteristic

A83A marking

Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Contextual Info: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

Contextual Info: Yageo corporation ALUMINUM electrolytic capacitors Miniature Aluminum Electrolytic Capacitors SB [ For Low Leakage Current ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature : -40° ~ +105°C Working Voltage : 6.3 ~ 100V

Contextual Info: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Size Aluminum Electrolytic Capacitors 105qC Single-Ended Lead Aluminum Electrolytic Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature : -40q ~ +105qC Working Voltage : 6.3 ~ 100V

ti75b

Abstract: MB1540 MB1550 MB1520
Contextual Info: Sept. 1995 Edition 3.0b DATA SH EET FUJITSU MB1520/MB1530/MB1540/MB1550 SERIES Bi-CMOS LSI RF 1C SPECIFICATION ADVANCED SEMICUSTOM TECHNOLOGY OF SUPER PLL WITH RF SYSTEM ON LSI The Fujitsu MB1520/1530/1540/1550 series are semicustom LSI IC's based on a master slice method. Super P LL P LL and Prescaler macros and high frequency

Contextual Info: Yageo corporation ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Aluminum Electrolytic Capacitors 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature Range : -40 ~ +105°C Rated Voltage Range : 6.3 ~ 100V

Contextual Info: Yageo corporation ELECTROLYTIC CAPACITORS Miniature Aluminum Electrolytic Capacitors SB [ For Low Leakage Current ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature Range : -40 ~ +105°C Rated Voltage Range : 6.3 ~ 100V

Contextual Info: KMM372V3200AK/AS KMM372V3280AK/AS DRAM MODULE KMM372V3200AK/AS & KMM372V3280AK/AS Fast Page Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: HB56UW872EJK Series 8 ,3 8 8 ,6 0 8-w ord x 7 2 -b it H igh D en sity D yn am ic R A M M od u le HITACHI ADE-203-720A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U W 872EJK belongs to 8 B yte DIMM (Dual In-line Memory M odule) fam ily, and has been developed as an optim ized main m em ory solution for 4 and 8 B yte processor applications.

Contextual Info: A L U M IN U M E L E C T R O L Y T IC C A P A C IT O R S SB [ For Low Leakage Current ] 105 C Single-Ended Lead A lum inum E lectrolytic Capacitors ELECTRICAL CHARACTERISTICS W orking Voltage : 6.3 ~ 100V Operating Temperature :-40° ~ -H 05 °C Rate Capacitance Range : 0 .1 - 47000pF

2SB1615

Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
Contextual Info: 118 • Package No. b^32fiS2 Applica­ tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type

Contextual Info: TEAPO ELECTRONIC CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Size Aluminum Electrolytic Capacitors 105°C Single-Ended Lead Aluminum Electrolytic Capacitors ELECTRICAL CHARACTERISTICS Working Voltage : 6.3 ~ 100V Operating Temperature : -40° ~ +105°C