F 540 NS Search Results

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

Contextual Info: 0.50MM C E N TE R F F C JUM PER C A B LE HIGH T E M P E R A T U R E C H AR T •A’ DIM. 30*240 76*3.00 51*240 102*340 152*440 127*440 178*440 203*440 305*540 254*540 229*540 BACKER TYPE -A- TYPE TYPE ‘A* TYPE TYPE -A- TYPE 'D' TYPE -A- TYPE V TYPE ‘A*

74HCTLS

Contextual Info: Zvtrex 540 SSS&541 ZX54HCTLS ZX74HCTLS Octal Buffers and Line Drivers with 3-State Outputs F ebrua ry 1985 OBJECTIVE SPECIFICATIONS Features Description m Function, pin-out, speed and drive The '540 and ’541 are general purpose high-speed octal line drivers/buffers with 3-state outputs. The inputs and

SED1540FOA

Abstract: DISPLAY EPSON EG LT 5247 H LT 5247 d 2499 display epson eg-24 eg-24 SED1520 SED1540 PF476-06
Contextual Info: EPSON P F 47 6-06 SEDI 540 Dot Matrix LCD Driver • Dot Matrix Drive with a 1/3 or 1/4 Duty • Built-in Display Data RAM • 4 COM Outputs + 73 SEG Outputs • DESCRIPTION The S E D I 540 is an LCD driver LSI intended mainly for segment displays. It generates LCD driving signals from

Contextual Info: EPSON P F 476-06 SEDI 540 Dot Matrix LCD Driver • Dot Matrix Drive with a 1/3 or 1/4 Duty • Built-in Display Data RAM • 4 C O M Outputs + 73 SE G Outputs • D E S C R IP T IO N The SEDI 540 is an LCD driver LSI intended mainly for segment displays. It generates LCD driving signals from

TFS280F

Contextual Info: Filename: tfs280f.doc version 1.0 VI TELEFILTER Filter specification 26.06.2002 TFS 280 F 1/5 Measurement condition Ambient temperature: Input power level: terminating impedances * Input: Output: 22 0±2 °C dBm 540 Ω ⎥⎥ -4,9 pF 230 Ω ⎥⎥ -6,3 pF

NSL-26AA

Abstract: AB5S271 Silonex SILONEX INC
Contextual Info: SILONEX INC 47E D • AB5S271 □□00357 T ■ NSL-26 & NSL-26AA OPTOISOLATORS 25.4 I. ( 10.414 \ 10.922) MIN .420 SILONEX f' ' T-W-g/ .100 ( 2 .540) ( 12.7 ) •5 r LEO MIN. L SXI I L q ,— ( CATHODE SHORT LEAD ( 5 .080) .200 r 0.019— ' (.381 \ .533)

HU20260

Abstract: HU20270 HU20280
Contextual Info: Ultrafast Recovery Modules HU20260 - HU20280 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J B K H F C Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L E A Dim. Inches 1.52 .725 .605 1.177 .745 .152 .540 .152 .495 .120

HU20130

Abstract: HU20140 HU20150
Contextual Info: Ultrafast Recovery Modules HU20130 - HU20150 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J B K H F C Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L E A Dim. Inches 1.52 .725 .605 1.177 .745 .152 .540 .152 .495 .120

Contextual Info: HITACHI AMERICA/ ELECTRON IbE D • 4MTb201 0GG3fl?3 fl ■ LM268CXP FEATURES ■ 740 W dot x 540(H ) dot graphic and alphanumeric display ■ Attachable controller LSI: H D 6 3 6 4 5 F /H D 6 4 6 4 5 F / H D66840 (See page 14, 22) ■ Color tone: Yellowgreen

Contextual Info: 2SJ471 Silicon P Channel D V -L MOS FET High Speed Power Switching HITACHI ADE-208-540 1st. Edition Features • Low on-resistance • 4V gate drive devices. • High speed switching R d s «*. = 25 m il typ. Outline T O -220C F M f G c 1's I OS 500 1. Gate

HU20010

Abstract: HU20015 HU20020
Contextual Info: Ultrafast Recovery Modules HU20010 - HU20020 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J B K H F C Working Peak Reverse Voltage HU20010* HU20015* HU20020* 100V 150V 200V 1.52 .725 .605 1.177 .745 .152 .540 .152 .495 .120 38.86 1.56 18.42

FH0110

Contextual Info: f _J IF C O R P O R A T I O GS9025 Serial Digital Receiver GEN LI N X II N PRELIMINARY DATA SHEET STANDARD FEATURES DESCRIPTION > fu lly com patible w ith SMPTE 259M and operational to 540 Mb/s > autom atic cable equalization typically greater than 350 m o f high quality cable at 270 Mb/s

IRFR110

Abstract: Mosfet irfr110 IRFU110
Contextual Info: f f ! H U S E M I C O N D U C T O R P A R R IRFR110 IRFU110 IS N-Channel Power MOSFETs Avalanche Energy Rated January 1994 Features Packages JEDEC TO-251AA TOP VIEW 4.7 A, 100V r DS ON = 0-540 ) SOURCE DRAIN TAB“ Single Puls« Avalanche Energy Rated Ï DRAIN

MIC2511C-6131T-LF3

Contextual Info: SO LD E R S U FFIX C U ST O M ER TERMINAL RoH S LE A D P b — F R EE LF3 S n IO O X Ye s Ye s r 7 f — p"°n) f c z J W E -M ID C O M ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted: GREEN/ORANGE YELLOW PARAM ETER .540 .429 [10.90] 4 - 1.006

HC541A

Contextual Info: II TC74HC540AP/AF/AFW TC74HC541AP/AF/AFW O C T A L BUS B U F F E R T C 74H C 540A P /A F/A FW TC74 H C 5 4 1 A P / A F / A F W IN V E R T IN G .3— STATE OUTPUTS N O N -IN V E R TIN G T h e TC 74H C 540 A /TC 74H C 541A a re high speed C M O S OCTRAL BUS

75 LS541

Abstract: 74LS540DC 74LS540PC
Contextual Info: 540 • 541 CO NNECTION DIAGRAMS PINOUT A r / c U ? ' ¡4LS/74LS540 i^4LS/74LS541 ^ f b ( o 9 % OCTAL BUFFER/LINE DRIVER (W ith 3 -S tate Outputs DESCRIPTION — The ’LS540and ’LS541 are sim ilar in function to the 'LS240 and ’LS241, respectively, except that the inputs and outputs are on opposite

R200D

Abstract: R2000 mips processor R2000 mips LR2000 LR3000 LR33000 MIPS R2000 bitch LSHA R2000
Contextual Info: S 3D4ÔD4 OOOf l f l n 540 m i L C LSI LOGIC LR33000 Self-Embedding Processor Introduction The LSI Logic LR33000 Self-Embedding Processor is a 32-bit RISC Reduced Instruction Set Computer m icroprocessor th a t has been optimized fo r use in high-perform ance em bed­

BFP-540

Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05605

Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 VDS VDGR ID RGS = 20 kΩ IDM VGS PD Tj, Tstg Visol humidity climate Tcase = 100 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 180 112 540 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A

F 540 NS

Abstract: SKM180
Contextual Info: Absolute Maximum Ratings 1 Symbol Conditions VDS VDGR ID RGS = 20 kΩ IDM VGS PD Tj, Tstg) Visol humidity climate Tcase = 100 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 180 112 540 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56

ao 5545

Abstract: pn 4420 SAA 7709
Contextual Info: E1F1C S E R IE S 346/396 Example Part Number 346 - 056 - 540 - 8 02 S e r ie s _ Z U Total N um ber o f Contacts C ontact C o d e _ C ontact R ow s and Insulator Style M ounting O ptions _ In su la to r C o lo u r

Contextual Info: f Z 7 S C S -m O M S O N JÆ, I M » I [ L I ^ [ M i * S T 7 5 C 530 S T 7 5 C 540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNETS, POTS LINES PRELIM IN ARY DATA SUMMARIZED FEATURES (for detailed features, see page 4