SILONEX Search Results

NSL-4460

Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Contextual Info: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:

NSL-701

Abstract: NSL-803
Contextual Info: Ö2SS271 G0Q0304 □ S3E 0 S I L O N E X INC SILONEX c SILICON PHOTOVOLTAIC CELLS FEATURES • • • • • • • Fast re spo nse High reliability, long life Protective, humidity resistant coating Operating Temperature Range: -65°C to 125°C Ideal for moderate reverse bias voltage operation

power LED 650nm

Abstract: 1/Detector/"Detector IC"/"CD"/NSL-4960 NSL-4960 photoconductive cell cdse
Contextual Info: 5 OC 8255271 SILONEX INC SILO N EX SD IN C 0 0 2 1 9 _ 0 DE~Jfl25S271 t -4 1 -4 1 0 0 □□5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES NSL-2900, 3900, 4900 SERIES TO-8 • Th ree P h o to co n d u ctiv e M aterials • Po w er D issip atio n @ 25° C:

NSL-9510

Abstract: PLT-10585 CLM6000 NSL-4960 CL5M2L cl5m9m clairex clm6500 Clairex CL703L NSL-5540
Contextual Info: SILONEX/CLAIREX EQUIVALENTS HERMETICS TO-5 HERMETIC TO-18 HERMETIC Silonex P/N Clairex P/N Silonex P/N Clairex P/N NSL-3510 NSL-3530 NSL-3540 NSL-4510 NSL-5510 NSL-5530 NSL-5540 NSL-6510 NSL-6530 NSL-7 5 10 NSL-7530 NSL-754 0 NSL-7550 NSL-9510 CL703L CL703A

silonex NSL

Contextual Info: SILONEX NSL-32 & NSL-32AA OPTOISOLflTORS . CHARACTERISTICS . TEST CONDITIONS . MIN. I .HSL-32. TYP. HAX. . HIN. NSL-32AA TYP. HAX. . . UNITS . -1 c r u 1F .Max f«d. current VF Forward voltage IR Reverse current <0 40 •a IF=16aA 2.0 2.0 volts Vr=4V 100 100

Contextual Info: SILONEX INC I.2 6 ± .0 5 l .6 9 / .5 8 1 ELECTRICAL SPEC. CONTROL LAMP L I F E 5000 HRS TYP e & 1 Ip Vr (VOLTS 1 I0HM51 (Mohms1 MIN MAX 300 900 Tr Td 100K(mSEC (mSEC) IraA) typ R (OHMSI MAX 17 1 3 .2 550 90 1 0 1 0 0 0GGG3b7 16 OUTPUT RESISTANCE flSSSE?!

NSL-7550

Abstract: 67Meg 200MEG NSL-7530 320v Silonex
Contextual Info: SILONEX ; Prelim inary Data Sheet TO -5 PHOTOCONDUCTIVE CELLS MATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 200 mW - Hermetically Sealed 12f5 mW - Plastic Encapsulated • Resistance Tolerance: ± 40% @ 1 Ftc ± 3 3 - 1 / 3 % & 2 Ftc

NSL-4960

Abstract: NSL-4980 NSL-7910 4980 NSL-5910 NSL-4970 nsl 4960 NSL-4950 NSL-6910 silonex NSL
Contextual Info: TO-8 Photocells Hermetic Package Features • Five Photoconductive Materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive provide up to eight standard resistance ranges in CdS or CdSe materials. Absolute Maximum Ratings

LA12

Abstract: SLCD-61N4 SLSD-71N4
Contextual Info: SLSD-71N4 Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Low capacitance, high speed • Protective coating 1.0 25.4 150 5.1 2.5 Description The Silonex series of silicon solderable planar

LA12

Abstract: SLCD-61N6 SLSD-71N6
Contextual Info: SLCD-61N6 Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Linear short circuit current • Low capacitance, high speed Description The Silonex series of silicon solderable planar

16 Photodiode-Array

Abstract: LA12 74A1 Photodiode Array
Contextual Info: SLD-74A1/16 Photodiode Array Features • • • • • • 16 element monolithic array Wide acceptance angle Low capacitance, fast switching time Low leakage current Linear response vs irradiance 18 pin dual in-line package Description This Silonex photodiode array consists of a line of 16

NSL-4962

Abstract: NSL-4932 4932 NSL-4912 photocells* nsl NSL-4922 NSL-4942 NSL-4952 5942 NSL-4982
Contextual Info: TO-8 Photocells Ceramic Package Features • Three photoconductive materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also

LA12

Abstract: SLED-56HF3A SLED-56HF3B SLED-56HF3C
Contextual Info: SLED-56HF3 GaP Light Emitting Diode Features • High output at low current • Very wide emission angle • Multiple power ranges • TO-46 flat window package CATHODE Common to case 3.9 0.8 Description The Silonex SLED-56HF3 is a high output Gallium Phosphide light emitting diode which produces a peak

NSL-4960

Abstract: photoconductive cell cdse silonex NSL cdse Photoconductive Cell Silonex NSL-395 PHOTOCELL NSL-2930 NSL-2940
Contextual Info: SILONEX INC 53E [ • ÛE55271 QDOOST? 7 ■ SILONEX i TO-8 PHOTOCONDUCTIVE CELLS f "F4|-4 FEATURES NSL-2900, 3900, 4900 SERIES • Three Photoconductive Materials TO-8 • Power Dissipation @ 25° C: 500 mW - Hermetically Sealed 250 mW - Plastic Encapsulated

Contextual Info: SILONEX INC SÎLONEX 0255271 0000350 1 47E D SL E D -561L S L E D -561F SL E D -561E SXI SLED-561L SLED -56IF SLED-56IE . 940 nm INFRARED EMITTER G e n e ra l D e s c r ip tio n The S ilo n e x SLED-561 i s a h ig h o u tp u t G a lliu m A rs e n id e i n f r a r e d e m i t t e r w hich

61N5

Abstract: SLSD-71N5 SLCD-61N5
Contextual Info: i ' l 5ÏL0N €X SLCD-61N5 n — PRELIMINARY Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Linear short circuit current • Low capacitance, high speed Description The Silonex series of silicon solderable planar

NSL-26AA

Abstract: AB5S271 Silonex SILONEX INC
Contextual Info: SILONEX INC 47E D • AB5S271 □□00357 T ■ NSL-26 & NSL-26AA OPTOISOLATORS 25.4 I. ( 10.414 \ 10.922) MIN .420 SILONEX f' ' T-W-g/ .100 ( 2 .540) ( 12.7 ) •5 r LEO MIN. L SXI I L q ,— ( CATHODE SHORT LEAD ( 5 .080) .200 r 0.019— ' (.381 \ .533)

3906

Abstract: STS-8857
Contextual Info: STS-8857 SILONEXl Transmissive Switch Assembly Features • Non contact switching • Three wires for electrical connection • Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on

Contextual Info: SLED-56HF2 GaAlAs Infrared Emitting Diode Features • High output at low current • Wide emission angle • Multiple power ranges • TO-46 flat window package CATHODE Common to case 3.9 0.8 Description This Silonex device is a high output Gallium Aluminum Arsenide infrared emitter which produces

5912

Contextual Info: TO-8 Photocells Ceramic Package Features • Four photoconductive materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also

Contextual Info: SLED-56E3 GaP Light Emitting Diode Features • High output at low current • Very wide emission angle • Multiple power ranges • TO-46 base package 25.4 min. 45° 3.0 Max. ø 0.5 ø 5.3 4.2 Description The Silonex SLED-56E3 is a high output Gallium Phosphide light emitting diode which produces a

Contextual Info: SLSD-71N7 Solderable Planar Photodiode Features • Visible to IR spectral sensitivity range • Oxide passivation • Linear short circuit current vs irradiance • Low capacitance, high speed • Protective coating Description The Silonex series of silicon solderable planar

Contextual Info: SLSD-71N4 Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Low capacitance, high speed • Protective coating 1.0 25.4 150 5.1 2.5 Description The Silonex series of silicon solderable planar

sLED

Contextual Info: SLED-56HL1 GaAs Infrared Emitting Diode Features • High output at low current • Narrow emission angle • Multiple power ranges • TO-46 package ø 5.3 0.5-0.52 Description The Silonex SLED-56HL1 is a high output Gallium Arsenide infrared emitting diode which produces a