F10N Search Results

F10N60

Contextual Info: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

LL1608-F15N

Abstract: LL1608-F2N7S 4000 LL1608-F2N2S LL1608-F6N8 LL1608F15n LL1608-F1N5S LL1608-F1N8S LL1608-F8N2 LL1608-F56N
Contextual Info: Sheet1 STANDARD DEVICES SELECTION GUIDE TYPE LL1608F TOKO Part Number LL1608-F1N2S LL1608-F1N5S LL1608-F1N8S LL1608-F2N2S LL1608-F2N7S LL1608-F3N3_* LL1608-F3N9_* LL1608-F4N7_* LL1608-F5N6_* LL1608-F6N8_* LL1608-F8N2 * LL1608-F10N_* LL1608-F12N_* LL1608-F15N_*

Contextual Info: MOTOROLA Order this document by F10N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M S F10N 02Z Medium Power Surface Mount Products TMOS Single N -Channel w ith M onolithic Zener ESD Protected G ate M o to r o la P re fe rre d D e v ic e EZFETs are an advanced series of power MOSFETs which

Contextual Info: F10NL1022 Diodes Bidirectional C-Tapped Transient Suppressor Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)100u V(RWM) (V) Work.Pk.Rev.Voltage22 I(PPM) Max.(A)Pk.Pulse Current100 V(C) Nom. (V) Clamping Voltage35.6

f10nk50z

Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Contextual Info: F10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT F10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested

F10N12L

Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)

hfct5208d

Abstract: HFCT-5208B STM141
Contextual Info: Thal HEW LETT mLEM PACKARD SC Duplex Single Mode Transceiver Technical Data HFCT-5208 Features Description • SC Duplex Single Mode Transceiver • Interm ediate SONET OC 12 SDH STM 14,1 Compliant • Single +5 V Pow er Supply • Multisourced 1 x 9 Pin

c2dS

Abstract: iv02h
Contextual Info: 19-5310; Rev 0; 6/10 TION KIT EVALUA BLE A IL A AV Automotive, Two-Channel Proximity and Touch Sensor The MAX1441 proximity and touch sensor IC is designed for capacitive proximity sensing in automotive passive remote keyless entry PRKE and other applications.

Contextual Info: JTlitxan PRODUCT DEVICES.INC. 1177 S L U E H E R O N BLVD. • R I V I E R A BEACH, F L O R I D A 33404 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source

f10nk50z

Abstract: P10NK50Z P10NK50 f10nk50 stp10nk50z Marking STMicroelectronics to220
Contextual Info: STP10NK50Z F10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z F10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■

F10-NC1006

Abstract: F10-NL1006 F10-NL1022 F10-NL1039
Contextual Info: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1 - r > FIO DATALINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current NEW GENERATION APPLICATIONS

LLV0603F

Contextual Info: LLV0603-F Series MULTILAYER CERAMIC CHIP INDUCTOR DESCRIPTION The LLV0603-F Series is a multilayer ceramic chip inductor with high-Q characteristics in an EIA standard 0201 footprint 0.6mm x 0.3mm and a low profile of only 0.33mm maximum. Manufactured with a proprietary

0201 footprint

Abstract: LLV0603F LLV0603-F1N0S LLV0603-F1N2S LLV0603-F1N5S LLV0603-F1N8S LLV0603-F2N2S LLV0603-F2N7S LLV0603-F3N3S LLV0603-F3N9S
Contextual Info: 2 TYPE Multilayer Chip Inductors LLV0603F Meeting Your Needs The LLV0603-F Series is a multilayer ceramic chip inductor with high-Q characteristics in an EIA standard 0201 footprint 0.6mm x 0.3mm and a low profile of only 0.33mm maximum. Manufactured with a proprietary ceramic material and process,

MAX1441

Abstract: capacitive proximity sensing in automotive passive c2dS
Contextual Info: 19-5310; Rev 0; 7/10 TION KIT EVALUA BLE A IL A AV Automotive, Two-Channel Proximity and Touch Sensor The MAX1441 proximity and touch sensor IC is designed for capacitive proximity sensing in automotive passive remote keyless entry PRKE and other applications.

F100

Contextual Info: 5Vdc • HCMOS/ TTL COMPATIBLE FULL-SIZE DIP CRYSTAL CLOCK OSCILLATORS ACO 20.2 x12.6 x 5.08 mm FEATURES: • Wide frequency range. • Tight symmetry option. • Fast rise and fall times. • H C M OS and TTL compatible. • Tristate Enable / Disable options.

Contextual Info: PPJP10NA60 / F10NA60 600V N-Channel MOSFET 600 V Voltage 10 A Current Features        RDS ON , VGS@10V,ID@5A<0.9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU

N343632LTQ

Abstract: N3436 N343632L F55N
Contextual Info: CMOS NKK SRAM Low Voltage Fast Synchronous with Burst Counter N343632L 2M-BIT 64K X 32 _ -K. -M. -N • Features • C M O S S R A M organ ized as 6 5 ,5 3 6 X 32b its • S in g le + 3 .3 V P ow er Su p ply • Fast C lo ck A c c e ss tim e : 5 .5 n s/1 0 0 M H z , 6 n s/9 0 M H z ,

Contextual Info: ‘ ON a DATE Jfc He REV. SZSOO IP S DCN t. K & D E S C R I PT I ON NO. % H DR. a üá CHK. APPD. APP D. ON I M V H Q -ê-üM Hi 4> 8 0 Hs- H ±0 . 1 t 0 .4 =»•<=- ( N0 T E 2 ) u SECT. ( S C A L E SECT. ENDING A B 2 0 4 5.5 44 C 2 0 . 2

Contextual Info: O K I semiconductor MSC1951-01 16-SEGM ENT, 16-DIGIT BARGRAPH and NUM ERIC G EN ER A L DESCRIPTION M SC1951-01 is a Bi-CMOS bargraph and alphanum eric display controller designed to interface w ith either vacuum fluorescent or LED displays. MSC1951-01 can drive displays w ith up to 16 positions w ith either 16 segm ent bargraph or seven

T2C211

Abstract: MAXQ20 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers
Contextual Info: Rev 0; 12/07 MAXQ7665/MAXQ7666 USER’S GUIDE V- MAGNET MAGNETIC FIELD DIRECTION M I R+ΔR I R-ΔR CAN 2.0B BUS S SHAFT I N ROTATION M M R-ΔR POWER MGMT 16-BIT TIMERS 3 V+ TEMP SENSOR UART (LIN 2.0) JTAG DIGITAL I/O CAN 2.0B 48-TQFN 7mm x 7m m -40°°C to

PD36 SMD transistor

Abstract: 857BH MAXQ2000 MAXQ610 PO46
Contextual Info: Rev 2; 7/10 MAXQ610 USER’S GUIDE MAXQ610 REGULATOR VOLTAGE MONITOR GPIO 16-BIT TIMER 16-BIT MAXQ RISC CPU 4KB ROM SECURE MMU CLOCK 64KB FLASH WATCHDOG 2KB SRAM 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER SPI USART0 USART1 Maxim Integrated Products i

25Mhz crystal INS

Abstract: 0842B M4-05H 205-AA p55im1 how to read Maxim date code USART code examples TbA 2025 MX 0842 11HM1
Contextual Info: Rev 0; 6/09 MAXQ FAMILY USER’S GUIDE: MAXQ2010 SUPPLEMENT IN-CIRCUIT DEBUGGER ADD REG JTAG ADDRESS GENERATOR MAXQ2010 STACK IP DP SYSTEM REGISTERS STATUS Acc 16 MUX DEMUX CONTROL 16 PERIPHERAL REGISTERS INSTRUCTION DECODER PROGRAM MEMORY DATA MEMORY SPI

CLM1117

Abstract: CLM1117M CLM1117M-X
Contextual Info: 800mA Low Dropout Regulator SCSI-II Active Terminator calodic CORPORATION \J CLM1117 FEATURES PR O D U C T DESCRIPTION • Guaranteed 800mA Output • Three Terminal Adjustable or Fixed 2.85V, 3V, 3.3V, 5V, 10V & 12V • Very Low Quiescent Current • Low Dropout Voltage of 1.2 Volts at Full Load

f10nk50z

Abstract: P10NK50Z STF10NK50Z P10NK50 STP10NK50Z JESD97 p10nk f10nk50
Contextual Info: STP10NK50Z F10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z F10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■