F111 Search Results

F1116

Abstract: cis 280v
Contextual Info: polyfet rf devices F1116 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1110

Abstract: F1104
Contextual Info: Case Style F F14 F53 F183 F1104 F1110 F1164 Outline Dimensions CASE # A B C D 2.00 2.00 .75 1.00 50.80 (50.80) (19.05) (25.40) 2.00 2.00 .75 1.00 F53 (50.80) (50.80) (19.05) (25.40) 1.26 1.00 .70 .200 F183 (32.00) (25.40) (17.78) (5.08) 3.50 2.13 .88 1.06

SG1559 circuit DIAGRAM

Contextual Info: bILILU N f1111=1 S F N l l = r V ~ X P SG1557/SG2557/SG3557 SGI559/SG2559/SG3559 SG1560/SG2560/SG3560 FUTURE PRODUCT RELEASE MAG AMP CONTROLLER g L - LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG1557, SG1559, and SG1560 family of integrated circuits has

2052M

Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE .150 MAX [3.81 m m 0 . 0 1 5 ” [ .5 8 ' m m 2X 0 .150 [05.50m m THRU .550 [8.89m m ] .250 5 .8 4 m m .150 [3.81m m MIN 0.09m m 0.06m m .100 .585 [9.78m m [2.54m m B EN$09-F1119 A ECN#02528 REV, D ES C R IP TIO N

AF114

Abstract: 1336H AF113
Contextual Info: F111, AF112, AF113, AF114 VW\National Active Filters ÆjA Semiconductor F111, AF112, AF113, AF114 Dual Filters features general description The A F111 th ro u gh A F 1 1 4 are dual bandpass filte rs tuned to the D TM F Touch Tone frequencies. Each filte r is a second o rde r bi-quad section. The

Contextual Info: RHÎbha'i M F1117V-2 LJ FOR DIGITAL MOBILE TELEPHONE, Rx DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of digital mobile com m unication equipm ent operating at 1477 MHz ~ 1501 MHz. 1. SMD package insures small size, lightweight. 2. Adjustment free.

TCXO

Abstract: TCXO-F100 F102 F101 F111 F112 F121 F122 crystal 10 MHz 1X107
Contextual Info: ROHS-Compliant Product TCXO-F100 Series 1. Specification Type: F101 F121 F111 F102 F122 F112 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 40°C . + 80°C: < + 2 ppm Frequency stability vs. supply changes UB ± 5 %:

1807a

Abstract: bolometer F1119C
Contextual Info: _ We|nsch£l Model Fl 119C lOO kHz to 4.2 GHz Model 1807A o.oi to 18 GHz RF TRANSFER STANDARD Feed-through Models F1119C and 1807A are Thermistor Mount/Power S plitte r com binations (with test port) used as a feedthrough standard for the calibration of terminating

Contextual Info: PBflU G E C P L E S S E Y DS3537-1.1 F1114-18 WAVEGUIDE SLIMLINE ISOLATORS * ROBUST * MINIATURE * LIGHT WEIGHT The F1114 to F1118 Series of low-power miniature slimline isolators are designed in waveguide sizes R70, R84, R100, R120 and R140 in the frequency range 5.9 to 18.0GHz.

Contextual Info: polyfet rf devices F1116 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

DN2450

Abstract: Voltage to Current Converters marking L2 package SOT A0208
Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: BurrĆBrown Products from Texas Instruments PCM1870 SLAS544A – MAY 2007 – REVISED SEPTEMBER 2007 16-Bit Low-Power Stereo Audio ADC With Microphone Bias and Microphone Amplifier FEATURES 1 • • • • • • • • • • • Analog Front End: – Stereo Single End Input With MUX

Contextual Info: BurrĆBrown Products from Texas Instruments PCM3793A PCM3794A SLAS529A – JANUARY 2007 – REVISED FEBRUARY 2007 16-Bit, Low-Power Stereo Audio CODEC With Microphone Bias, Headphone, and Digital Speaker Amplifier FEATURES • • • • • • • • •

S0222

Contextual Info: BurrĆBrown Products from Texas Instruments PCM3793A PCM3794A SLAS529A – JANUARY 2007 – REVISED FEBRUARY 2007 16-Bit, Low-Power Stereo Audio CODEC With Microphone Bias, Headphone, and Digital Speaker Amplifier FEATURES • • • • • • • • •

Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: IBM F1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts

LMX2306

Abstract: LMX2306TM LMX2316 LMX2326
Contextual Info: January 1998 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF Personal Communications LMX2306 550 MHz LMX2316 1.2 GHz LMX2326 2.8 GHz General Description Features The LMX2306/16/26 are monolithic, integrated frequency synthesizers with prescalers that are designed to be used to

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

BA211TU

Contextual Info: Self-Contained Term inal Blocks Features • Self-contained: end plates not required. • Rugged heavy-duty construction. • All units are molded from UL940-V0 material with excellent flame and shock resistance. • Current capacity ranges from 5Ato 40A.

9k19

Abstract: g19-h A1285
Contextual Info: 
 


     
 USER’S MANUAL
















     

  
  



           

 !"

es1978

Contextual Info: ES56CV-PI / ES56CVH-PI PCI Audio/Modem Solution Data Sheet p r e l im in a r y < ESS Technology, Inc. DESCRIPTION The ES56CV-PI chipset is a highly integrated multimedia solution which brings advanced PCI audio and modem functionality to notebook and desktop systems. The

Contextual Info: Supertex inc. FP0100 Fault Protection Switch with Current Fold-back Features ►► ►► ►► ►► General Description The Supertex FP0100 is a high voltage fault protection switch with current fold-back. It is designed to protect system output power supplies against over-current or short circuit conditions.

Contextual Info: I = = = = '= Advance F1111 F1111 EV SiGe High Dynam ic Range 1900MHz Low Noise A m p lifie r Features • 1.7 G H z/2G H z operation for cellular and digital w ireless applications • Low power, single supply 3 volts • High IIP3 and Low Noise m eet dem anding