F1510 Search Results
F1510 Price and Stock
NXP Semiconductors MC34PF1510A6EPR2PF1510 |
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MC34PF1510A6EPR2 | Reel | 15,000 | 5,000 |
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MC34PF1510A6EPR2 | 9,000 | 1 |
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MC34PF1510A6EPR2 | 18 Weeks | 5,000 |
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MC34PF1510A6EPR2 | 18 Weeks | 5,000 |
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TE Connectivity SMQF1510KJTSMQF1W 510K 5% |
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SMQF1510KJT | Digi-Reel | 6,000 | 1 |
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SMQF1510KJT |
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Diodes Incorporated DF1510S-TBRIDGE RECT 1PHASE 1KV 1.5A DF-S |
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DF1510S-T | Digi-Reel | 5,866 | 1 |
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DF1510S-T | 14,427 |
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DF1510S-T | Cut Tape | 738 | 1 |
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DF1510S-T | 3,748 |
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DF1510S-T | 1,103 | 1 |
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DF1510S-T | 500 | 20 Weeks | 1,500 |
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DF1510S-T | 108,000 | 10 Weeks | 1,500 |
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DF1510S-T | 579,000 | 1 |
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DF1510S-T | 738,607 |
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DF1510S-T | 45,000 |
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Suzhou Good-Ark Electronics Co Ltd DF1510SBRIDGE RECT 1PHASE 1KV 1.5A DFS |
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DF1510S | Cut Tape | 2,633 | 1 |
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SMC Diode Solutions MBRF15100CTDIODE ARRAY SCHOTT 100V ITO220AB |
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MBRF15100CT | Tube | 1,950 | 1 |
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MBRF15100CT | 1 |
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F1510 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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F1510 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 35.55KB | 2 |
F1510 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: F1510A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.5A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop |
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F1510A J-STD-020 AEC-Q101 | |
SMF635-F1510
Abstract: F1510 to18GHz 18GHZ
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SMF635-F1510 15GHz 18GHz SMF635-F1510 F1510 to18GHz 18GHZ | |
Contextual Info: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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F1510 | |
Contextual Info: F1510A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.5A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop Low leakage current |
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F1510A J-STD-020 AEC-Q101 123FL) 02-Rev | |
F1510Contextual Info: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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F1510 F1510 | |
Transistor BFR 135
Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
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900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412 | |
SMF635-F1510Contextual Info: Communications PAC Isolators & Circulators SMF635-F1510 15 GHz to 18 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com |
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SMF635-F1510 SMF635-F1510 | |
Contextual Info: F1510A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.5A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop |
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F1510A J-STD-020 AEC-Q101 123FL) | |
Contextual Info: polyfet rf devices F1510 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance |
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F1510 \GS12 72410GC | |
Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SMF635-F1510 15 GHz to 18 GHz Communications PAC ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation |
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SMF635-F1510 | |
Contextual Info: DF15005S-DF151 OS Vishay Lite-On Power Semiconductor 1.5A Surface Mount Glass Passivated Bridge Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • L o w fo rw a rd v o lta g e d ro p , h igh c u rre n t |
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DF15005S-DF151 D-74025 24-Jun-98 | |
mkp 275v x2
Abstract: PILKOR PCX2 337 MKP PCX2 337 MKP x2 150n 275 VAC F10333 99002 PILKOR PCX2 337 mkp 150n 275v x2 SH03001-2003 pcX2 275V
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337x1 UL1414 CSA-C22 UL1283 mkp 275v x2 PILKOR PCX2 337 MKP PCX2 337 MKP x2 150n 275 VAC F10333 99002 PILKOR PCX2 337 mkp 150n 275v x2 SH03001-2003 pcX2 275V | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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FRL-644
Abstract: 572.741.022.0 CDQ2B63-50D Rexroth 7860 CT032U0025AE AA-0058G 70PYES0033 AF3000-03 8L502-102 JA1040
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Contextual Info: Data Line Filters DIP & SMD 6 ,8 , 14 & 16 Pin Add G or J fo r SMD , See pg. 30, fig. 12, 13, 14 & 16 Data Line Protection Applications High Current & Voltage Isolation Frequency Range up to 100 MHz Hi-Pot 500 VRMSMinimum Filter Common & Differential Mode Noise |
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F-1500 F-1501 F-1502 F-1509 F-1510 F-1511 16-Pin 14-Pin | |
Contextual Info: LITEM? I SE M IC O N D U C T O R S DF1500S thru F1510S VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere 1.5 AMPS. SURFACE MOUNT GLASS PASSIVATED SILICON BRIDGE DF-S .3 1 0 7 .9 1 — .2 9 5 (7.41—— .255 (6.5 h .2 4 5 ( 6 .2 H a . + F E A TU R ES J. |
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DF1500S DF1510S DO-15 0201AD | |
PILKOR PCX2 337 MKP
Abstract: Class B DV- 130-1 PILKOR PCX2 337 275V X2 Class B DV 130-1 PCX2 337 pilkor PCX2 pilkor mkp 275v x2 F14333
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337x1 UL1414 CSA-C22 UL1283 PILKOR PCX2 337 MKP Class B DV- 130-1 PILKOR PCX2 337 275V X2 Class B DV 130-1 PCX2 337 pilkor PCX2 pilkor mkp 275v x2 F14333 | |
F1504S
Abstract: F1508S
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DF1500S DF1510S F1504S F1508S | |
PILKOR PCX2 337 MKP
Abstract: 275V X2 PILKOR PCX2 337 Pilkor M275V-X2 mkp 1UF F10333 PCX2 337 MKP
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337x1 UL1414 CSA-C22 UL1283 PILKOR PCX2 337 MKP 275V X2 PILKOR PCX2 337 Pilkor M275V-X2 mkp 1UF F10333 PCX2 337 MKP | |
275v m x2
Abstract: X2 275V x2 150n 275 VAC PILKOR PCX2 337 MKP Pilkor
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337x1 UL1414 CSA-C22 UL1283 275v m x2 X2 275V x2 150n 275 VAC PILKOR PCX2 337 MKP Pilkor | |
PILKOR PCX2 337 MKP
Abstract: F1033
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337x1 UL1414 CSA-C22 UL1283 PILKOR PCX2 337 MKP F1033 | |
B15-096-F3LO
Abstract: R15-000-RNLO B15-096 F15-000-A3HO norgren olympian r15 valve F15-800-A3HD BS4275 F52-415-AAGD Norgren olympian norgren silencer
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Contextual Info: •HYUNDAI HYM536A814A M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814A is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 |xF decoupling capacitors are mounted |
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HYM536A814A 36-bit HY5117404A HYM536A814AM/ASLM HYM536A814AMG/ASLMG DQ0-DQ35) F15-10-F6B | |
Contextual Info: Pilkor components EMI Suppression film capacitors PCX2 337x1 Standard MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range (E6 series) * 0.01㎌ to 3.3㎌ Capacitance tolerance ±10 %, ±20 % Rated (AC) voltage 50 to 60 Hz |
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337x1 UL60384-14 E60384-14 |