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    Text: F1682CM HSXAWAVE High Power GaAs FET August 1998 Rev. A Features • High O u tp u t Pow er O U TLIN E D R A W IN G Pi<ffi=37dBm typ. @2.4GHz • High G ain 17.50 Gl= 12.5dB(typ.)@2.4GHz • High Efficiency • High L inearity Tjadd =40%(typ.)@2.4GHz IP3=48dBm(typ.)@2.4GHz


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    PDF 37dBm HWF1682CM 48dBm F1682C