F1841 Search Results

Contextual Info: F1841CCD600 Diodes Common Cathode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current40 V(RRM) (V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1841CAH600 Thyristors Center-Tapped CA Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)600 I(T) Rated Maximum (A)40 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: F1841 Linear ICs Active Filter for Telecommunications status Military/High-RelN Nom. Supp V 12 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70 Package StyleCan Mounting StyleT Pinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number DescriptionTV Channel Filter; for Japan channel 1

Contextual Info: F1841CAH1400 Thyristors Center-Tapped CA Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)40 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: F1841CCH600 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)600 I(T) Rated Maximum (A)40 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: F1841CAD1400 Diodes Common Anode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current40 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1841CCD1400 Diodes Common Cathode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current40 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1841CAD600 Diodes Common Anode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current40 V(RRM) (V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1841CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)40 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

SSC3020

Abstract: SSC3030 F1841 SSC3110 F605 SSC3010 SSC3120 SSC3150
Contextual Info: S S C 3 0 0 0 s e r ie s HIGH SPEED CMOS STANDARD CELL • DESCRIPTION The SSC3000 Series is comprised of the SSC3000 and SSC3500 family of standard cells. Each family is offered in 20 preset gate to I/O combinations. Both the SSC3000 and SSC3500 offer high speed and high drive capability

SLA1024

Abstract: SLA1081 SLA1039 SLA1029
Contextual Info: S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS • DESCRIPTION The SLA10000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 10 arrays ranging from 8,000 to 101,800 usable gates

S-MOS navnet

Abstract: S-MOS asic B16c F1841
Contextual Info: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel

Contextual Info: S-N 0 S S Y S T E M S INC Sb E J> • 7 ^ 3 2 ^ 0 “? O Q G l S M b 07T H S M O SSC2000 Series CMO^ LOW VOLTAGE STANDARD CELL • Low Voltage Operation at 0.9 V min. • Built-in Level Shift Circuit • Up to 11,000 gates ■ DESCRIPTION The SSC2000 Series CMOS standard cell, to which low-threshold manufacturing process is applied, enables low

872S

Abstract: 837s 8b3s aA88
Contextual Info: S-M S SYSTEMS INC 31E D • 7^35^0^ 0000=577 b * S M 0 S L A 8 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY ■ DESCRIPTION The SLA8000 Series is a super-high-speed, densely-packaged master slice CMOS gate array sea of gates . The SLA8000 Series comes in seven models, They can accommodate up to 16K usable gates to

78f1164

Abstract: 78F0881 78F0511 78F1165 78f0513 78F0511A 78f1826 78f0546 78F0550 70f3378
Contextual Info: Functions Supported by CubeSuite This is information about the next version of CubeSuite modules , etc.(2010/4 update) Product/module name Version CubeSuite V1.20 Integrated Development Environme V1.20 Debug Tool Common Interface V1.21 Device Information Common Interfa V2.00

SLA1029

Contextual Info: S-M 0 S SYSTEMS 31E D INC • 7S 32e 0e! Q00DSÖ3 1 BISMO S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS - r - i£ ■ w /~ ô j DESCRIPTION The S U M 0000 Series Is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists o f 10 arrays ranging from 8,000 to 101,800 usable gates

F100-5

Abstract: 8b3s 872s
Contextual Info: S L A 8 0 0 0 s e rie s CMOS HIGH SPEED GATE ARRAY • DESCRIPTION The SLA8000 Series is a super-high-speed, densely-packaged master slice CMOS gate array sea of gates . The SLA8000 Series comes in seven models. They can accommodate up to 16K usable gates to

TTL 7466

Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
Contextual Info: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs

34992

Abstract: SSC5100 F232-10 pinpad 78568
Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20

F0887

Abstract: f0889 78f0513 78F0511 78F0881 70f3378 70f3232 UPD78F18 F0514 78F1165
Contextual Info: CubeSuite 対応機能一覧 次のバージョンのCubeSuite （モジュール）等についての情報です（2010 年4月現在）。 製品モジュール名 バージョン CubeSuite V1.20 V1.20 統合開発環境フレームワーク デバッグ・ツール共通インタフェース V1.21