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    F1S22N10 Search Results

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    F1S22N10 Price and Stock

    Rochester Electronics LLC RF1S22N10SM

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S22N10SM Bulk 3,853 312
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    • 1000 $0.96
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    Rochester Electronics LLC RF1S22N10

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S22N10 Bulk 1,990 281
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    • 1000 $1.07
    • 10000 $1.07
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    Harris Semiconductor RF1S22N10

    22V, N-Channel POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S22N10 1,990 1
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    • 100 $1.03
    • 1000 $0.8553
    • 10000 $0.7626
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    Harris Semiconductor RF1S22N10SM

    22V, N-Channel POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S22N10SM 3,853 1
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    • 100 $0.9247
    • 1000 $0.7675
    • 10000 $0.6843
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    F1S22N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RFP22N10

    Contextual Info: RFP22N10, F1S22N10, F1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10 PDF

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334
    Contextual Info: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 PDF

    RFP22N10

    Contextual Info: RFP22N10, F1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFP22N10, RF1S22N10SM 175oC TB334 RFP22N10 PDF

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
    Contextual Info: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    RFP22N10

    Contextual Info: RFP22N10, F1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		RFP22N10, RF1S22N10SM TA9845. 080C1 RFP22N10 PDF

    RFP22N10

    Abstract: TA9845
    Contextual Info: ASSESS? RFP22N10, F1S22N10, F1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		RFP22N10, RF1S22N10, RF1S22N10SM O-263AB RF1S22N10SM O-263AB RFP22N10 TA9845 PDF

    RFP22N10

    Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
    Contextual Info: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		RFP22N10, RF1S22N10SM RFP22N10 TB334 RF1S22N10SM RF1S22N10SM9A PDF