F2002S Search Results
F2002S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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F2002S | Polyfet RF Devices | FET, Enhancement, ID 1.6 A | Original | 35.33KB | 2 |
F2002S Price and Stock
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Surge Components Inc DF2002S- Tape and Reel (Alt: DF2002S) |
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DF2002S | Reel | 18 Weeks | 18,000 |
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SOURIAU-SUNBANK 39F2002S2406C5Circular MIL Spec Backshells ADAPTER ASSEMBLY |
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SPC Multicomp MC0201L6F2002SERes, Thick Film, 20K, 1%, 0.05W, 0201; Resistance:20Kohm; Resistance Tolerance:± 1%; Power Rating:50Mw; Resistor Case/Package:0201 [0603 Metric]; Resistor Technology:Thick Film; Resistor Type:General Purpose; Product Range:- Rohs Compliant: Yes |Multicomp Pro MC0201L6F2002SE |
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MC0201L6F2002SE | Cut Tape | 8,100 | 1 |
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SOURIAU-SUNBANK 18F2002SA1608CN4BACKSHELL - SELF SEATING |
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SOURIAU-SUNBANK 18F2002SA2012CN6BACKSHELL - SELF SEATING |
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F2002S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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F2002SContextual Info: polyfet rf devices F2002S General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F2002S F2002S | |
Contextual Info: polyfet rf devices F2002S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended |
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F2002S 1110Avenida |