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    F221 Search Results

    F221 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0402DF-221XJRW Coilcraft Inc General Purpose Inductor, Visit Coilcraft Inc
    0402DF-221XJRU Coilcraft Inc General Purpose Inductor, Visit Coilcraft Inc
    0402DF-221XJR Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS Visit Coilcraft Inc
    0402AF-221XJLW Coilcraft Inc General Purpose Inductor, 0.22uH, 5%, 1 Element, Ferrite-Core, SMD, 0403, CHIP, ROHS COMPLIANT Visit Coilcraft Inc
    0402AF-221XJLU Coilcraft Inc General Purpose Inductor, 0.22uH, 5%, 1 Element, Ferrite-Core, SMD, 0403, CHIP, ROHS COMPLIANT Visit Coilcraft Inc
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    F221 Price and Stock

    ROHM Semiconductor TRR01MZPF2211

    RES SMD 2.21K OHM 1% 1/16W 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TRR01MZPF2211 Digi-Reel 5,720 1
    • 1 $0.14
    • 10 $0.07
    • 100 $0.0392
    • 1000 $0.02448
    • 10000 $0.01883
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    TRR01MZPF2211 Cut Tape 5,720 1
    • 1 $0.14
    • 10 $0.07
    • 100 $0.0392
    • 1000 $0.02448
    • 10000 $0.01883
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    Alpha Wire F221B3-8-CL202

    HEATSHRINK 3/8 IN CLEAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey F221B3-8-CL202 401 200
    • 1 -
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    • 1000 $0.48988
    • 10000 $0.45085
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    Hirose Electric Co Ltd DF22-1EP-7.92C

    CONN PLUG HOUSING 1POS 7.92MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DF22-1EP-7.92C Bag 284 1
    • 1 $0.22
    • 10 $0.177
    • 100 $0.144
    • 1000 $0.11738
    • 10000 $0.10822
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    Avnet Abacus DF22-1EP-7.92C 14 Weeks 100
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    CoreStaff Co Ltd DF22-1EP-7.92C 102
    • 1 $0.057
    • 10 $0.056
    • 100 $0.054
    • 1000 $0.053
    • 10000 $0.053
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    Sager DF22-1EP-7.92C 100
    • 1 -
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    • 100 $0.135
    • 1000 $0.135
    • 10000 $0.116
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    Alpha Wire F221V3-4-BK105

    HEATSHRINK 3/4" X 4' BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey F221V3-4-BK105 Bulk 121 1
    • 1 $9.11
    • 10 $6.895
    • 100 $5.2215
    • 1000 $5.2215
    • 10000 $5.2215
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    Alpha Wire F221V1-4-YL103

    HEATSHRINK 1/4" X 4' YELLOW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey F221V1-4-YL103 Bulk 47 1
    • 1 $5.63
    • 10 $4.264
    • 100 $3.2294
    • 1000 $3.2294
    • 10000 $3.2294
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    F221 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F2211 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F22111/2 BK015 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 BK 125" Original PDF
    F22111/2-BK015 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 BK 125' Original PDF
    F22111/2 BK070 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 BK 5X6" Original PDF
    F22111/2-BK070 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 BK 5X6" Original PDF
    F22111/2 BK105 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 BK 4" Original PDF
    F22111/2-BK105 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 BK 5X4' Original PDF
    F22111/2-BL105 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 BLU 5X4' Original PDF
    F22111/2 BL105 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 BLU 5X4" Original PDF
    F22111/2-CL015 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 CLEAR 125' Original PDF
    F22111/2 CL015 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 CLEAR 125" Original PDF
    F22111/2 CL070 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 CLEAR 6" Original PDF
    F22111/2-CL070 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 CLEAR 5X6" Original PDF
    F22111/2 CL100 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 1.5" CLR 250X4" Original PDF
    F22111/2-CL100 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 1.5" CLR 250X4' Original PDF
    F22111/2-CL105 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 CLEAR 5X4' Original PDF
    F22111/2 CL105 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 CLEAR 5X4" Original PDF
    F22111/2-GR105 Alpha Wire Heat Shrink Tubing, Cables, Wires - Management, HEAT SHRINK TUBE 11/2 GRN 5X4' Original PDF
    F22111/2 GR105 Alpha Wire Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBE 11/2 GRN 5X4" Original PDF
    F22111/2 OR015 Alpha Wire FIT SHRINK TUBING 125 FT Original PDF
    ...

    F221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F2211

    Abstract: No abstract text available
    Text: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original
    PDF F2211 F2211

    F2213

    Abstract: No abstract text available
    Text: polyfet rf devices F2213 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original
    PDF F2213 F2213

    F2212

    Abstract: No abstract text available
    Text: polyfet rf devices F2212 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original
    PDF F2212 F2212

    TCXO-F200

    Abstract: F221 kvg TCXO F202 F211 F221 F222
    Text: ROHS-Compliant Product TCXO-F200 Series 1. Specification Type: F201 F221 F211 F202 F222 F212 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 20°C . + 70°C: < + 1 ppm Frequency stability vs. supply changes UB ± 5 %:


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    PDF TCXO-F200 35MHz kHz35MHz 1x10-7 BF-79IS D-74924 F221 kvg TCXO F202 F211 F221 F222

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2213 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original
    PDF F2213

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original
    PDF F2211

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2212 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    PDF F2212

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand

    C8051F226

    Abstract: C8051F221 F206 C8051F206 C8051F220 c8015
    Text: C8051F206 C8051F220/1/6 C8051F230/1/6 Mixed-Signal 8KB ISP FLASH MCU Family - On-Chip Debug Circuitry Facilitates Full Speed, Nonintrusive In-system Debug No Emulator Required! Provides Breakpoints, Single-Stepping, Watchpoints, Stack Monitor Inspect/Modify Memory and Registers


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    PDF C8051F206 C8051F220/1/6 C8051F230/1/6 F206/226/236) 16-Bit CIP-51 MCS-51 B-100 C8051F226 C8051F221 F206 C8051F206 C8051F220 c8015

    Untitled

    Abstract: No abstract text available
    Text: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT


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    PDF 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


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    PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    Samsung oneNand Mux

    Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    PDF MuxOneNAND512 KFM1216Q2M) MuxOneNAND512 KFM1216Q2M 48FBGA 512Mb Samsung oneNand Mux samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A)

    switches

    Abstract: f2203
    Text: MAGNETIC SWITCHES - INTERRUTTORI MAGNETICI FFV High switching power. Long electrical life. Mountings are available for the cylinders on the market. Standard sensitivity suitable for most of cylinders on the market. Other sensitivities on demand. 2-wire circuit to make connection easier. 3-wire circuit suggested in


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    PDF

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


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    PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    samsung 2GB Nand flash 121 pins

    Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


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    PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash

    022AH

    Abstract: No abstract text available
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 022AH

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2211 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


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    PDF F2211 1110AvenidaAcaso, 724100e

    pin diagram of ic 1163

    Abstract: CD022
    Text: F2224 F2212 2400/1200/600/300 bps Full Duplex Modem FA IR C HILD A Schlum berger Com p any Advance Information, June 1986 Advanced Signa! Processing Division Description Connection Diagram 28-Lead DIP Top View The F2224 and F2212 are single-chip full-duplex modem


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    PDF F2224 F2212 F2224 F2212, 28-Lead CD02240F pin diagram of ic 1163 CD022

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2213 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"to process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF F2213 7241DCH

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2212 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF F2212 1110AvenidaAcaso,

    circuit diagram of calling bell

    Abstract: calling bell Bell-202 DTMF RS232 schlumberger F2212 F2212DC F2212PC F2212QC F2224DC
    Text: FAIRCHILD A Schlum berger C om pany F2224 F2212 2 4 0 0 /1 2 0 0 /6 0 0 /3 0 0 bps Full Duplex Modem A d va n ce In fo rm a tio n , J u n e 1986 Advanced Signal Processing Division Description Connection Diagram 28-Lead DIP Top View The F2224 and F2212 are single-chip full-duplex modem


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    PDF F2224 F2212 F2224 F2212 F2212, RS232 28-Lead circuit diagram of calling bell calling bell Bell-202 DTMF RS232 schlumberger F2212DC F2212PC F2212QC F2224DC

    K25Y5PN6

    Abstract: No abstract text available
    Text: BC COMPONENTS Class 2, low loss 0.5% max. 1 kV, 2 kV and 3 kV Ceramic disc capacitors Product specification Supersedes data of November 1997 File under BC Components, BC06 1999 Apr 15 COMPONENTS BC Components Product specification Class 2, low loss (0.5% max.)


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    PDF IA198 K25Y5PN6