FA-20H 26 Search Results

TE92

Abstract: YTE73
Contextual Info: HYM71V8655HCT6 8Mx64, 8Mx16 based, PC100 D E S C R IP T IO N The Hynix HYM71V8655HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

te82

Contextual Info: , HYM71V32655AT8 32Mx64 16Mx8 based, PC100 DESCRIPTION The Hynix HYM71V32655AT8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin glass-epoxy

LT-88

Contextual Info: HYM71V16755HCT8 16Mx72, 16Mx8 based, PC100 DESCRIPTION The H ynix H Y M 71V16755HC T8 Series are 16M x72bits ECC Synchronous DRAM M odules. The m odules are com posed o f nine 16M x8bits CM O S Synchronous DR AM s in 400m il 54pin TS O P -ll package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin

OC032

Abstract: DG37
Contextual Info: HYM71V32655AT8M 32Mx64, 16Mx8 based, PC100 DESCRIPTION The Hynix HYM 71V32655AT8M Series are 32M x64bits Synchronous DRAM M odules. The m odules are com posed o f sixteen 16M x8bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin

cc1c

Abstract: 6655h
Contextual Info: HYM71V16655HCT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix H Y M 71V16655HC T6 Series are 16M x64bits Synchronous DRAM Modules. T he m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: HYM72V64656T8 64Mx64, 32Mx8 based, PC100 DESCRIPTION The H Y M 72 V 6 4 65 6 T 8 H-series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 32M x8 bit Synchronous DRAMs In 54-pin TS O P II and 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy printed

Contextual Info: SGRAM MODULE KMM965G511Q P N / KMM966G511Q(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.2 July 1998 Rev. 2.2 (Jul. 1998) aECTROMCS SGRAM MODULE KMM965G511Q(P)N / KMM966G511Q(P)N

Contextual Info: HYM72V64C756T8 64Mx72, 32Mx8 based, PC100 DESCRIPTION Th e H Y M 7 2 V 6 4 C 7 5 6 T 8 H -Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 32M x8 bit Synchronous D RA M s in 54-pin T S O P II, two 48-pin S O P Register Buffers, one 24-pin S O P PLL and 8-pin

AM28F020

Abstract: qu34 A03404
Contextual Info: Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ ■ ■ CMOS Low power consumption ■ — 100 n A m a xim um s ta n d b y c u rre n t Flashrite Programming

Contextual Info: LM 4546B LM4546B AC '97 Rev 2 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Texas In s t r u m e n t s Literature Number: SNOSAI4D t t i o n OBSOLETE a l S e p te m b e r 26, 2011 LM4546B Semiconductor AC 7 Rev 2 Multi-Channel Audio Codec with Sample Rate

Contextual Info: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin

Contextual Info: HYMD1326458-H/L 32Mx64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H (D D R 266B «C L=2.5), L(DDR200@ CL=2) Function Supported Byte# H e x a V a lu e F u n c tio n D e s c rip tio n Note K Number of Bytes written into serial memory at module

astec psu

Abstract: psu5 astec server ac power supplies astec aa E186249-A124-CB-1
Contextual Info: Rev.08.03.11_#0.0 DS460S-3 Series Page 1 DS460S-3 460 Watts Distributed Power System Total Power: 460 Watts Input Voltage: 90-264 Vac # of Outputs: Main + Standby Special Features • • • • • • • • • • • • • • • Active power factor correction

Contextual Info: HYM72V32756AT8 32Mx72, 32Mx8 based, PC100 DESCRIPTION The HYM72V32756T8 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of nine 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed

Contextual Info: ^ MITSUBISHI LSIs M 5 M 2 8 F 4 0 0 F P ,V P , R V -1 0 ,-1 2 ,-1 5 ^ 4194304-BIT 524288-WORD BY 8-BIT/262144-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The M itsubishi M 5 M 2 8 F 4 0 0 F P , VP , RV are h ig h -s p e e d PIN CONFIGURATION (TOP VIEW) 4 1 9 4 3 0 4 - bit CMOS Flash Memories. They are suitable fo r

TE85

Contextual Info: HYM76V8M655HG L T6 8Mx64, 4M x16 based, PC100 DESCRIPTION T h e H y n ix H Y M 7 1 V 6 M 6 5 5 H G (L )T 6 S e rie s a re 8 M x 6 4 b its S y n c h ro n o u s D R A M M o d u le s . T h e m o d u le s a re c o m p o s e d o f e ig h t 4 M x 1 6 b its C M O S S y n c h ro n o u s D R A M s in 4 0 0 m il 5 4 p in T S O P -II p a c k a g e , o n e 2 K b it E E P R O M in 8 p in T S S O P p a c k a g e o n a 1 6 8 p in

Contextual Info: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current

Contextual Info: HYMD132725A8-K/H/L 32Mx72 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H (D D R 266B eC L=2.5), L(DDfl2O O 0CL=2) Function Supported Byte# H e x a V a lu e Note Function Description K H L K H Number of Bytes written into serial memory at module

Contextual Info: 2 M -B IT 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S F L A S H M E M O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current • Programming and erasing voltage 12V ± 7%

L94HB

Abstract: Rt612 20HR
Contextual Info: RT 612 6V1.2Ah RT612 is a general purpose battery with 5 years life in standby servi ce, or mor e than 260 cycles at 100% D.O.D by cyclic use. As with all Ritar batteries, al l RT models are rechargeable, highly efficient, leak proof and maintenance free.

TIRIS DST

Abstract: Transponder texas 4d Tiris DST 4D Transponder Texas 4C RI-CTL-MB2B-30 transistor s2000 Transponder 4d tiris tiris rfid tiris tiris 4d
Contextual Info: Configuring an S2000 Reader via USB Application Report A TEXAS INSTRUMENTS TECHNOLOGY January 2008 SCBA024 11-06-26-011 Configuring an S2000 Reader via USB Application Report A TEXAS INSTRUMENTS TECHNOLOGY Literature Number: SCBA024 (11-06-26-011) January 2008

block diagram for automatic room power control layout

Abstract: 28F2100B
Contextual Info: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%

Contextual Info: FUJITSU May 1997 Revision 0.3 data sheet GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The G O B 256U V 6431(A)-(67/84/100/125)Q -S is a high performance, 2-m egabtye synchronous, graphic RAM m odule organized

Contextual Info: HYMD2326468-K/H/L 32Mx64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function S upporte d Note K H e x a V a lu e Function Description B yte# H N u m b e r o f Bytes w ritten into serial m e m o ry a t m odule