FAIRCHILD 703 Search Results

1n813 fairchild

Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei

smd transistor w1a

Abstract: smd transistor w1a 95 w1a 71 smd Transistor smd transistor w1a 83 transistor w1a 94 W1A smd transistor transistor SMD W1A smd transistor w1a 25 prodigit 3311c SMD W1A
Contextual Info: www.fairchildsemi.com Prototype Report AC/DC Converter Power Supply using FSDH321BM Fairchild Power Switch • European AC Input Voltage ( 185VRMS – 265 VRMS) • Total Output Power 8.5W • One DC Output: 12V / 700mA 2006 Fairchild Semiconductor Page 1

sn76131

Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Contextual Info: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

CCD442A

Abstract: CCD442
Contextual Info: LDWAL CCD442A 2048 x 2048 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ 2048 x 2048 Photosite Array 15^m x 15fim Pixel 30.72mm x 30.72mm Image Area Near 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons at 250k

Contextual Info: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description  Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and

FDS86141

Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDS86141

Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDS86141

Abstract: SOIC127P600 SOIC127P600X175-8M
Contextual Info: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description  Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

D4104

Abstract: LTA 703 S
Contextual Info: IVIITEL T e c h n ic a l D a t a MD41Ö4 ISO-CMOS Quad Low Voltage to High Voltage Translator with 3-State Outputs FE B . 79 • PIN-FOR-PIN COMPATIBLE WITH FAIRCHILD’S F4104/34104 LOGIC AND CONNECTION DIAGRAM • NO LATCH-UP PROBLEMS • 3-STATE FULLY BUFFERED OUTPUTS

22202

Abstract: F4104 MD4104 MD4104BC MD4104BD 25cmax
Contextual Info: M IT E L T e c h n ic a l D a t a MD4104 ISO-CMOS Quad Low Voltage to High Voltage Translator with 3-State Outputs F E B . 79 LOGIC AND CONNECTION DIAGRAM • PIN-FOR-PIN COMPATIBLE WITH FAIRCHILD’S F4104/34104 • NO LATCH-UP PROBLEMS • 3-STATE FULLY BUFFERED OUTPUTS

74F161 PC

Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
Contextual Info: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

MA703

Abstract: 703H
Contextual Info: /xA703 <y RF-IF AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRC UITS G E N E R A L D E S C R IP T IO N — T h e /j A 7 0 3 is a m o n o lith ic R F - IF A m p lifie r c onstructed using the F a irc h ild P la n a r* e p ita x ia l process and is inte n d e d fo r use as a lim itin g or n o n -lim itin g a m p lifie r,

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

transistor H 802

Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

transistor H 802

Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

702 y TRANSISTOR

Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

MJE800

Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

ic 803

Abstract: KSE800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor

ic 701

Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor