FDS86141 Search Results
FDS86141 Price and Stock
onsemi FDS86141MOSFET N-CH 100V 7A 8SOIC |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
FDS86141 | Digi-Reel | 5,558 | 1 |
|
Buy Now | |||||
![]() |
FDS86141 | Reel | 2,500 | 11 Weeks | 2,500 |
|
Buy Now | ||||
![]() |
FDS86141 | 23,902 |
|
Buy Now | |||||||
![]() |
FDS86141 | 9,000 | 7 |
|
Buy Now | ||||||
![]() |
FDS86141 | 9,000 | 1 |
|
Buy Now | ||||||
![]() |
FDS86141 | Cut Tape | 2,423 | 1 |
|
Buy Now | |||||
![]() |
FDS86141 |
|
Buy Now | ||||||||
![]() |
FDS86141 | 1,140 |
|
Get Quote | |||||||
![]() |
FDS86141 | 3,350 | 1 |
|
Buy Now | ||||||
![]() |
FDS86141 | 1 |
|
Get Quote | |||||||
![]() |
FDS86141 | 2,276 |
|
Get Quote | |||||||
![]() |
FDS86141 | 2,500 |
|
Buy Now | |||||||
![]() |
FDS86141 | 11 Weeks | 2,500 |
|
Buy Now | ||||||
![]() |
FDS86141 | 12 Weeks | 2,500 |
|
Buy Now | ||||||
![]() |
FDS86141 | Cut Tape | 1,871 | 0 Weeks, 1 Days | 1 |
|
Buy Now | ||||
![]() |
FDS86141 | 13 Weeks | 2,500 |
|
Buy Now | ||||||
![]() |
FDS86141 | 22,500 |
|
Get Quote | |||||||
Fairchild Semiconductor Corporation FDS86141Transistors |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
FDS86141 | 8,048 |
|
Get Quote |
FDS86141 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
FDS86141 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7A 8-SOIC | Original | 7 |
FDS86141 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
Contextual Info: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 | |
FDS86141Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
FDS86141Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
FDS86141
Abstract: SOIC127P600 SOIC127P600X175-8M
|
Original |
FDS86141 FDS86141 SOIC127P600 SOIC127P600X175-8M | |
wurth 744
Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
|
Original |
com/an5043 AN5043, APP5043, Appnote5043, wurth 744 ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40 |