fga30n60lsd
Abstract: FGA30N60 PT 1000 TC Direct
Text: FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as
|
Original
|
PDF
|
FGA30N60LSD
FGA30N60LSD
FGA30N60
PT 1000 TC Direct
|
design ups inverter
Abstract: 247A03
Text: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as
|
Original
|
PDF
|
FGH30N60LSD
FGH30N60LSD
FGA30N60LSD
O-247
design ups inverter
247A03
|
Untitled
Abstract: No abstract text available
Text: SGP23N60UF 600V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature. •
|
Original
|
PDF
|
SGP23N60UF
220ns
O-220
SGP23N60UF
|
Untitled
Abstract: No abstract text available
Text: SGF23N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • • •
|
Original
|
PDF
|
SGF23N60UF
220ns
SGF23N60UF
SGF23N60U
|
PT 1000 TC Direct
Abstract: IGBT 200-4
Text: FGAF40N60UF 600 V PT IGBT General Description Fairchild 's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature. Features
|
Original
|
PDF
|
FGAF40N60UF
FGAF40N60UF
PT 1000 TC Direct
IGBT 200-4
|
Untitled
Abstract: No abstract text available
Text: SGP23N60UF 600V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature. •
|
Original
|
PDF
|
SGP23N60UF
SGP23N60UF
220ns
O-220
|
PT 1000 tc direct
Abstract: No abstract text available
Text: SGF23N60UF 600 V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • •
|
Original
|
PDF
|
SGF23N60UF
SGF23N60UF
220ns
PT 1000 tc direct
|
Untitled
Abstract: No abstract text available
Text: SGH40N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching
|
Original
|
PDF
|
SGH40N60UF
|
Untitled
Abstract: No abstract text available
Text: SGH40N60UF 600 V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where High Speed Switching is required feature. • High Speed Switching
|
Original
|
PDF
|
SGH40N60UF
SGH40N60UF
|
IGBT cross reference
Abstract: AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure
Text: July, 2000 AN9007 High Performance 1200V PT IGBT with Improved Short-Circuit Immunity Chongman Yun, Sooseong Kim, Youngdae Kwon and Taehoon Kim Fairchild Semiconductor 82-3 Dodang-Dong, Wonmi-Ku, Buchon, Kyunggi-Do, KOREA Phone +82-32-680- 1325, Fax)+82-32-680- 1823, E-mail)cmyun@Fairchildsemi.co.kr
|
Original
|
PDF
|
AN9007
IGBT cross reference
AN9007
diode rectifier ebr
IGBT SCHEMATIC
IGBT tail time
AN-9007
PP339
IGBT 2000
failure analysis IGBT
IGBT failure
|
Untitled
Abstract: No abstract text available
Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs December 2001 Features Description • 6A, 100V, rDS ON = 0.180Ω Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and PChannel enhancement types with ratings from 100V to
|
Original
|
PDF
|
FRX130D,
FRX130R,
FRX130H
1000K
1E13n/cm2
1E14n/cm2
|
Untitled
Abstract: No abstract text available
Text: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 14A, 100V, RDS on = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FRM140D, FRM140R, FRM140H 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 23A, 100V, RDS on = 0.130Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM140D,
FRM140R,
FRM140H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
|
|
|
Untitled
Abstract: No abstract text available
Text: FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 6A, -100V, RDS on = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM9130D,
FRM9130R,
FRM9130H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
|
Original
|
PDF
|
JANSR2N7272
FRL130R4
1000K
|
smps power circuit using ka3842
Abstract: bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic
Text: Application Note 9015 July, 2000 A180W, 100KHz Forward Converter Using QFET by I.S. Yang Introduction The inherent performance advantage of power MOSFETs makes their use very attractive in switched mode power supplies. The fundamental advantage of the power MOSFET is the
|
Original
|
PDF
|
A180W,
100KHz
100KHz,
smps power circuit using ka3842
bobbin EER-3542
220V ferrite core transformer
sec ka7912
EER3542D
ic ka3842b
ka3842 application circuits
2 mosfet forward converter cookbook
220v 300w ac regulator circuit
KA3842B Schematic
|
Untitled
Abstract: No abstract text available
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRK150D,
FRK150R,
FRK150H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FRS140D, FRS140R, FRS140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 17A, 100V, RDS on = 0.145Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRS140D,
FRS140R,
FRS140H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRL9130D,
FRL9130R,
FRL9130H
-100V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
Untitled
Abstract: No abstract text available
Text: FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as
|
Original
|
PDF
|
FGA30N60LSD
|
Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
|
Original
|
PDF
|
FRF9150D,
FRF9150R,
FRF9150H
-100V,
O-254AA
1000K
3000K
Rad Hard in Fairchild for MOSFET
|
BC207b
Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Text: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW
|
OCR Scan
|
PDF
|
BC113
35289X
BC114
35Z90C
BC115
6291A
BC207
35292X
BC207A
35293H
BC207b
BC113 SGS
BC208A
BC209B
BF257
BC209
BC208 transistor
|
