FAST RECOVERY DIODE 1200V 200A Search Results

SIDC06D120E

Contextual Info: Preliminary SIDC06D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D120E 1200V ICn 5A A This chip is used for:

1000V 20A transistor

Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Contextual Info: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30

fast recovery Diode 1200V 200A

Abstract: E80276 RM200HA-20F
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM200HA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200HA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs

E80276

Abstract: RM200DA-20F
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs

E80276

Abstract: RM200DA-20F k1a2
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs

VR300

Abstract: RM100HA-XXF E80276
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM100HA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100HA-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/1000/1200V • trr Reverse recovery time . 0.8µs

anode common fast recovery diode

Abstract: 3300V common anode 600v anode common fast recovery diode dual 600v 20a diode DIODE 100A diode super fast CC240602 CC240650 CC241250
Contextual Info: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V 1400V 3300V CC240602 CN2406020N Voltage CC241250 CN241250 CC240610 CN240610 QRC0610T30 QRF0610T30 CC241210 CN241210 QRC1210T30 QRF1210T30 QRC1410T30 QRF1410T30 200A QRC0620T30 QRF0620T30 QRC1220T30

Contextual Info: SIDC53D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC53D120H8 VR IF

E80276

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/800/1000/1200V • trr Reverse recovery time . 0.8µs

IC data book free download

Abstract: diode DIODE 200A 600V FAST RECOVERY DIODE fast recovery Diode 1200V 200A DUAL DIODE diodes diode 26 1200V fast dual DIODE 200A 600V
Contextual Info: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V CD240602 CD241202 1400V CD240650 CD241250 100A QRD0610T30 QRD1210T30 QRD1410T30 200A QRD0620T30 QRD1220T30 QRD1420T30 300A QRD0630T30 QRD1230T30 QRD1430T30 QRD0640T30 50A 3300V Voltage Circuit Config

Contextual Info: Bulletin I27246 08/06 HFA80FA120P HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V VF typ = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal

Contextual Info: Bulletin I27246 08/06 HFA80FA120P HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V VF typ = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal

FS200R12KT4

Abstract: IEC62258-3
Contextual Info: SIDC105D120H8 Fast switching diode chip in Emitter Controlled -Technology A Features: • 1200V Emitter Controlled technology 120 µm chip  soft, fast switching  low reverse recovery charge  small temperature coefficient  Qualified according to JEDEC for target

FS200R12KT4R

Contextual Info: SIDC105D120H8 Fast switching diode chip in Emitter Controlled -Technology A Features: • 1200V Emitter Controlled technology 120 µm chip  soft, fast switching  low reverse recovery charge  small temperature coefficient  Qualified according to JEDEC for target

APT60GF120JRDQ3

Abstract: APT10035LLL
Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

igbt 800v 80a

Contextual Info: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

d 6283 ic

Abstract: APT10035LLL APT50GF120JRDQ3
Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

transistor c295

Contextual Info: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

MBM200GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM200GR12A

Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

Contextual Info: APTDF200H120G Diode Full Bridge Power Module VRRM = 1200V IC = 200A @ Tc = 60°C Application + AC1 • • • • AC2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times