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    FCPF16N60NT Price and Stock

    onsemi FCPF16N60NT

    MOSFET N-CH 600V 16A TO220F
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    DigiKey FCPF16N60NT Tube 1,000
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    Newark FCPF16N60NT Bulk 100
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    Fairchild Semiconductor Corporation FCPF16N60NT

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    Bristol Electronics FCPF16N60NT 47
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    Quest Components FCPF16N60NT 37
    • 1 $6.2442
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    FCPF16N60NT 12
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    Win Source Electronics FCPF16N60NT 208
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    FCPF16N60NT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCPF16N60NT Fairchild Semiconductor 600V N-Channel MOSFET SupreMOS ; 3-TO-220F Original PDF

    FCPF16N60NT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    355 mosfet

    Abstract: ATX SMPS FCP16N60N FCPF16N60NT mosfet 600V 16A
    Text: SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170Ω Features Description • RDS on = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCP16N60N FCPF16N60NT 355 mosfet ATX SMPS FCPF16N60NT mosfet 600V 16A

    Untitled

    Abstract: No abstract text available
    Text: FCP16N60N / FCPF16N60NT N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP16N60N FCPF16N60NT

    FCPF16N60NT

    Abstract: FCP16N60N mosfet 600V 16A
    Text: SupreMOSTM FCP16N60N / FCPF16N60NT tm N-Channel MOSFET 600V, 16A, 0.170Ω Features Description • RDS on = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCP16N60N FCPF16N60NT FCPF16N60NT mosfet 600V 16A

    marking SJ date diode

    Abstract: v6000 FCPF16N60NT
    Text: FCP16N60N / FCPF16N60NT N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP16N60N FCPF16N60NT FCPF16N60NT marking SJ date diode v6000

    FCP11N60

    Abstract: AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N
    Text: www.fairchildsemi.com AN-9068 Gate Resistor Design Guidelines for SupreMOS Summary The faster switching of power MOSFETs enables higher power conversion efficiency. However, parasitic components in the devices and boards are involving switching characteristics more as the switching speed is


    Original     		PDF AN-9068 FCP11N60 AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N