FDB66N15 Search Results

FDB66N15 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FDB66N15		Fairchild Semiconductor	150V N-Channel MOSFET		Original	PDF	656.32KB	8

FDB66N15 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking 66a Abstract: FDB66N15 Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)	Original	FDB66N15 marking 66a FDB66N15	PDF
Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)	Original	FDB66N15 FDB66N15 FDB66N15TM	PDF

Catalog Datasheet

Type

Document Tags

PDF

marking 66a

Abstract: FDB66N15
Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

Original

FDB66N15 marking 66a FDB66N15

PDF

Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

Original

FDB66N15 FDB66N15 FDB66N15TM

PDF