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    FDD5N50TM Search Results

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    FDD5N50TM Price and Stock

    Rochester Electronics LLC FDD5N50TM

    4A, 500V, 1.4OHM, N-CHANNEL POWE
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    DigiKey FDD5N50TM Bulk 753
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    FLIP ELECTRONICS FDD5N50TM-WS

    N-CHANNEL 500 V 4A (TC) 40W (TC)
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    DigiKey FDD5N50TM-WS Reel 2,000
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    onsemi FDD5N50TM-WS

    MOSFET N-CH 500V 4A DPAK
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    DigiKey () FDD5N50TM-WS Cut Tape
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    FDD5N50TM-WS Digi-Reel 1
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    FDD5N50TM-WS Reel
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    Avnet Americas FDD5N50TM-WS Reel 0 Weeks, 2 Days 1,786
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    Verical FDD5N50TM-WS 10,000 692
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    Newark FDD5N50TM-WS Reel 2,500
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    Rochester Electronics FDD5N50TM-WS 10,000 1
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    Avnet Silica FDD5N50TM-WS 143 Weeks 2,500
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    EBV Elektronik FDD5N50TM-WS 143 Weeks 2,500
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    Flip Electronics FDD5N50TM-WS 17,350
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    FAIRCHILD FDD5N50TM

    FDD5N50TM
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    Verical FDD5N50TM 2,744 871
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    Fairchild Semiconductor Corporation FDD5N50TM

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    Bristol Electronics FDD5N50TM 1,218
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    Rochester Electronics FDD5N50TM 2,984 1
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    FDD5N50TM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FDD5N50TM_WS
    		Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel Original PDF 509.95KB 8
    FDD5N50TM-WS
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 4A DPAK Original PDF 726.38KB

    FDD5N50TM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD5N50 PDF

    FDD5N50TM

    Abstract: FDD5N50 FDD5N50TF ULTRA FAST diode 400v 5a
    Contextual Info: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50 FDD5N50 FDD5N50TM FDD5N50TF ULTRA FAST diode 400v 5a PDF

    MOSFET 500V 5A

    Contextual Info: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDD5N50 FDD5N50 MOSFET 500V 5A PDF

    FDD5N50

    Contextual Info: FDD5N50 N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.4  Features Description • RDS on = 1.15  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD5N50 FDD5N50 PDF