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    FDMC7572S Search Results

    FDMC7572S Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC7572S
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 40A POWER33 Original PDF 8
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    FDMC7572S Price and Stock

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    Rochester Electronics LLC FDMC7572S

    POWER FIELD-EFFECT TRANSISTOR, 2
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    DigiKey FDMC7572S Bulk 2,608 167
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    onsemi FDMC7572S

    MOSFET N-CH 25V 22.5A/40A PWR33
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    Verical () FDMC7572S 9,000 209
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    Bristol Electronics FDMC7572S 4,792
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    Rochester Electronics FDMC7572S 2,608 1
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    Fairchild Semiconductor Corporation FDMC7572S

    Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
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    Rochester Electronics FDMC7572S 20,766 1
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    FDMC7572S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description „ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMC7572S FDMC7572S PDF

    Contextual Info: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description ̈ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMC7572S FDMC7572S PDF

    FDMC7572S

    Abstract: BY 225 diode
    Contextual Info: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description „ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMC7572S FDMC7572S BY 225 diode PDF