FDMC86244 Search Results
FDMC86244 Price and Stock
onsemi FDMC86244MOSFET N-CH 150V 2.8A/9.4A 8MLP |
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FDMC86244 | Digi-Reel | 3,515 | 1 |
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FDMC86244 | Reel | 0 Weeks, 2 Days | 1,429 |
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FDMC86244 | 4,408 |
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FDMC86244 | 6,000 | 483 |
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FDMC86244 | Cut Tape | 1 |
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FDMC86244 |
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FDMC86244 | 9,410 | 1 |
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FDMC86244 | 1 |
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FDMC86244 | 3,000 |
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FDMC86244 | 10 Weeks | 3,000 |
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FDMC86244 | 3,000 | 11 Weeks | 3,000 |
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FDMC86244 | 12 Weeks | 3,000 |
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FDMC86244 | 30,000 |
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FDMC86244 | 6,000 | 1 |
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onsemi FDMC86244-L701FET 150V 134.0 MOHM MLP33 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86244-L701 | Reel |
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FDMC86244-L701 | Reel | 111 Weeks | 3,000 |
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Fairchild Semiconductor Corporation FDMC86244Transistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86244 | 6,119 |
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FDMC86244 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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FDMC86244 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.8A POWER33 | Original | 7 | ||||
FDMC86244-L701 | onsemi | FET 150V 134.0 MOHM MLP33 | Original | 527.58KB | 10 |
FDMC86244 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDMC86244Contextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMC86244 FDMC86244 | |
MO-240Contextual Info: FDMC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDMC86244 MO-240 | |
3.3*3.3 mlpContextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMC86244 FDMC86244 3.3*3.3 mlp | |
Contextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description ̈ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMC86244 |