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    FDME910PZT Price and Stock

    Flip Electronics FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
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    DigiKey FDME910PZT Reel 2,872
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    onsemi FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
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    DigiKey FDME910PZT Reel
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    Rochester Electronics FDME910PZT 586 1
    • 1 $0.2994
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    TME FDME910PZT 1
    • 1 $0.757
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    Flip Electronics FDME910PZT 7,245
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    Flip Electronics FDME910PZT-P

    P-CHANNEL 20 V 8A (TA) 2.1W (TA)
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    DigiKey FDME910PZT-P Bulk 4,373
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    onsemi FDME910PZT-P

    Transistor MOSFET P-CH 20V 8A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDME910PZT-P)
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    Avnet Americas FDME910PZT-P Reel 0 Weeks, 2 Days 2,500
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    Rochester Electronics FDME910PZT-P 165,000 1
    • 1 $0.2778
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    • 100 $0.2611
    • 1000 $0.2361
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    Flip Electronics FDME910PZT-P 4,373
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    Aptina Imaging FDME910PZT_P

    FDME910PZT_P
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    Verical FDME910PZT_P 160,000 1,271
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    FDME910PZT_P 5,000 1,271
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    FDME910PZT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDME910PZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 8A MICROFET Original PDF

    FDME910PZT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDME910

    Abstract: B175 FDME910PZT
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		PDF FDME910PZT FDME910PZT FDME910 B175

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		PDF FDME910PZT

    Untitled

    Abstract: No abstract text available
    Text: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.


    Original     		PDF FDME910PZT FDME910PZT

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		PDF FDME910PZT