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    onsemi FDS9435A

    MOSFET P-CH 30V 5.3A 8SOIC
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    DigiKey FDS9435A Digi-Reel 27,557 1
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    FDS9435A Cut Tape 27,557 1
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    FDS9435A Reel 27,500 2,500
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    Mouser Electronics FDS9435A 5,502
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    Verical FDS9435A 42,200 1,435
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    Onlinecomponents.com FDS9435A 10,000
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    Rochester Electronics FDS9435A 42,200 1
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    TME FDS9435A 2,295 1
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    Ameya Holding Limited FDS9435A 5,780
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    Richardson RFPD FDS9435A 5,000
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    Avnet Asia FDS9435A 14 Weeks 7,500
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    UMW FDS9435A

    MOSFET P-CH 30V 5.3A 8SOIC
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    DigiKey FDS9435A Digi-Reel 2,990 1
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    FDS9435A Cut Tape 2,990 1
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    onsemi FDS9431A

    MOSFET P-CH 20V 3.5A 8SOIC
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    DigiKey FDS9431A Cut Tape 1,624 1
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    FDS9431A Digi-Reel 1,624 1
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    FDS9431A Reel 1,148 2,500
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    Avnet Americas FDS9431A Reel 2,500 12 Weeks 2,500
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    FDS9431A Ammo Pack 27 Weeks, 5 Days 1
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    FDS9431A Reel 2,500
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    Mouser Electronics FDS9431A 3,173
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    Verical FDS9431A 15,000 2,500
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    FDS9431A 2,125 19
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    Arrow Electronics FDS9431A 15,000 12 Weeks 2,500
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    FDS9431A 12,500 12 Weeks 2,500
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    FDS9431A Cut Strips 2,125 12 Weeks 1
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    FDS9431A Reel 2,500
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    Onlinecomponents.com FDS9431A
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    Quest Components FDS9431A 332
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    Ameya Holding Limited FDS9431A 41,033
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    Richardson RFPD FDS9431A 2,500
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    Avnet Asia FDS9431A 12 Weeks 2,500
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    Avnet Silica FDS9431A 13 Weeks 2,500
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    New Advantage Corporation FDS9431A 15,000 1
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    onsemi FDS9412A

    MOSFET N-CH 30V 8A 8SOIC
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    DigiKey FDS9412A Reel
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    onsemi FDS9400A

    MOSFET P-CH 30V 3.4A 8SOIC
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    Verical FDS9400A 21,239 663
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    Arrow Electronics FDS9400A Cut Strips 1 8 Weeks 1
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    Rochester Electronics FDS9400A 26,104 1
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    TME FDS9400A 1
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    Flip Electronics FDS9400A 3,728
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    FDS94 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDS9400 Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS9400A Fairchild Semiconductor 30 V P-Channel PowerTrench MOSFET Original PDF
    FDS9400A Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS9400A_NL Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDS9412A Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF
    FDS9412_NL Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9431 Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDS9431A Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDS9431A Fairchild Semiconductor P-Channel 2.5 V Specified MOSFET Original PDF
    FDS9431A Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDS9431A_F085 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 8-SOIC Original PDF
    FDS9431A-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 8-SOIC Original PDF
    FDS9431A_NL Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDS9435A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDS94 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9431A FDS9953A L86Z
    Text: FDS9431A P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and


    Original
    PDF FDS9431A CBVK741B019 F011 F63TNR F852 FDS9431A FDS9953A L86Z

    FDS9431A

    Abstract: FDS9431A-F085
    Text: tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and


    Original
    PDF FDS9431A FDS9431A-F085

    FDS9400A

    Abstract: No abstract text available
    Text: FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    PDF FDS9400A FDS9400A

    FDS9431A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS9431A P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and


    Original
    PDF FDS9431A FDS9431A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    8 pin ic 9435A

    Abstract: 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16
    Text: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF FDS9435A OT-23 OT-223 SOIC-16 8 pin ic 9435A 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original
    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FDS9412A

    Abstract: No abstract text available
    Text: FDS9412A N-Channel PowerTrench MOSFET 30V, 8A, 21mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low


    Original
    PDF FDS9412A FDS9412A

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF FDS9412

    FDS9431A

    Abstract: No abstract text available
    Text: FDS9431A P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and


    Original
    PDF FDS9431A FDS9431A

    fds9435a

    Abstract: FDS9435 FDS9435A data ds9435
    Text: FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    PDF FDS9435A fds9435a FDS9435 FDS9435A data ds9435

    9435a

    Abstract: FDS9435A data 9435a mosfet p 9435a
    Text: FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    PDF FDS9435A FDS9435A 9435a FDS9435A data 9435a mosfet p 9435a

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9400A FDS9953A L86Z
    Text: FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    PDF FDS9400A CBVK741B019 F011 F63TNR F852 FDS9400A FDS9953A L86Z

    gs 9412

    Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF FDS9412 gs 9412 F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294

    FDS9412

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDS9412 FDS9412

    Untitled

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDS9412

    Untitled

    Abstract: No abstract text available
    Text: tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and


    Original
    PDF FDS9431A

    Untitled

    Abstract: No abstract text available
    Text: FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    PDF FDS9435A

    9435a

    Abstract: FDS9435A SOIC-16
    Text: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF FDS9435A OT-23 OT-223 SOIC-16 FDS9435A 9435a SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: May 1999 FAIRCHILD SEM IC ONDUCTO R tm FDS94 35A Single P -Channel Enhancement Mode Field Effect Transistor Features GeneralDescription SO -8 P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan
    PDF FDS94 FDS9435A

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H May 1999 IL D SEMICONDUCTOR FDS9435A Single P-Channel Enhancement Mode d Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan
    PDF FDS9435A

    fds9435

    Abstract: No abstract text available
    Text: May 1998 F A IR C H IL D E M IC D N D U C T O R i FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan
    PDF FDS9435A fds9435

    cfw SOT23

    Abstract: No abstract text available
    Text: November 1997 F /\IR G H II_ D M lC O N D U C T O R FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan
    PDF FDS9412 cfw SOT23

    Untitled

    Abstract: No abstract text available
    Text: November 1997 F A IR C H IL D S E M IC O N D U C T O R tm FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Descri ption Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan
    PDF FDS9412 FDS9412