FDT1600N10ALZ Search Results
FDT1600N10ALZ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
FDT1600N10ALZ |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V SOT-223-4 | Original | 10 |
FDT1600N10ALZ Price and Stock
onsemi FDT1600N10ALZMOSFET N-CH 100V 5.6A SOT223-4 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
FDT1600N10ALZ | Cut Tape | 3,068 | 1 |
|
Buy Now | |||||
![]() |
FDT1600N10ALZ | Ammo Pack | 111 Weeks | 5 |
|
Buy Now | |||||
![]() |
FDT1600N10ALZ | 11,205 |
|
Buy Now | |||||||
![]() |
FDT1600N10ALZ | 4,000 | 4,000 |
|
Buy Now | ||||||
![]() |
FDT1600N10ALZ | 4,000 | 12 Weeks | 4,000 |
|
Buy Now | |||||
![]() |
FDT1600N10ALZ | Cut Tape | 13,236 | 1 |
|
Buy Now | |||||
![]() |
FDT1600N10ALZ |
|
Buy Now | ||||||||
![]() |
FDT1600N10ALZ | 530 |
|
Buy Now | |||||||
![]() |
FDT1600N10ALZ | 76 | 1 |
|
Buy Now | ||||||
![]() |
FDT1600N10ALZ | 3,239 | 1 |
|
Buy Now | ||||||
![]() |
FDT1600N10ALZ | 4,000 |
|
Buy Now | |||||||
![]() |
FDT1600N10ALZ | 12 Weeks | 4,000 |
|
Buy Now | ||||||
![]() |
FDT1600N10ALZ | 13 Weeks | 4,000 |
|
Buy Now | ||||||
![]() |
FDT1600N10ALZ | Cut Tape | 625 | 0 Weeks, 1 Days | 5 |
|
Buy Now | ||||
![]() |
FDT1600N10ALZ | 14 Weeks | 4,000 |
|
Buy Now | ||||||
Fairchild Semiconductor Corporation FDT1600N10ALZTransistors |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
FDT1600N10ALZ | 11,059 |
|
Get Quote |
FDT1600N10ALZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
fdt1600n10alzContextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while |
Original |
FDT1600N10ALZ FDT1600N10ALZ OT-223 | |
Contextual Info: Preliminary FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been |
Original |
FDT1600N10ALZ FDT1600N10ALZ | |
Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior |
Original |
FDT1600N10ALZ |