FERRANTI ZVN Search Results

Ferranti

Abstract: 4070 CMOS analogue ohmmeter circuit diagram digital ic cd 4066 1N4141 cmos 4070 Ferranti Semiconductors 10k multiturn preset simple SL 100 NPN Transistor ZN451
Contextual Info: ! 4 FERRANTI semiconductors ZN451E/CJ ADVANCE PRODUCT INFO RM ATIO N 3% Digit D V M IC with External Auto-Zero FEATURES • External circuits may be included in the auto zero loop • FuR-scale reading 1 -999m V or lower. • Measures sum or difference of tw o inputs

FXT2907ASM

Abstract: FXT3866 ZVN4206 FXT2222ASM FXT54SM fmmt3904TA ferranti mosfets
Contextual Info: ZETEX SEMICON DUCTORS 2 03E D • ^70578 000b7fib 1 ■ Z E T B ; CENTRE COLLECTOR E-LINE^i’lWT The Ferranti E-line range is now available with a centre collector surface mount outline making it suitable as a replacement for SOT-89 devices. The range has been extended to include popular SOT-89 specifications,

FERRANTI

Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
Contextual Info: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20

ferranti

Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
Contextual Info: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

ZVN0106A

Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
Contextual Info: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0

ZVNL535

Contextual Info: ”t 5 PLESSEY SENI C ON D/ DI SCR ET E 7220533 PLESSEY I>E~Jj 7 5 5 0 5 3 3 SEMICOND/DISCRETE O O D S S 'H 95D 0 559 9 T -3 S -Z 5 N-channel enhancement mode vertical D M O S FET ZVN L535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

Contextual Info: PLESSEY SE MI CO ND /D I SCR ET E 7220533 PLESSEY ~TS DE I 7 5 5 0 5 3 3 0 D D S 7 4 7 SE M IC O N D / D IS C RE TE 95D 05747 T - 3 S - 2 S N-channel enhancement mode vertical DMOS FET ZVN4206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

1A 400v scr to220

Contextual Info: PLESSEY SEfllCOIMD/DISCRETE 7220533 PLESSEY TS SEMICOND/ D I S C R E T E N-channel enhancement­ mode vertical DMOS FET dF | 75SQ S33 QOOSbBB 95D 05 63 3 T '3 S 'Z S ZVN0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

ZVN0545

Abstract: ZVN0545L
Contextual Info: ^5 PLESSEY SEtlICOND/DISCRETE 7220533 PLESSEY SEMICOND/ D I S C R E T E N-channel enhancement­ mode vertical DMOS FET DE~| 7520533 0005b3S □ | ~ 95D 05635 T ' 3 s5 ZVN0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

plessey

Abstract: zvn1409 G146
Contextual Info: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

zvn2110

Abstract: G156 ZVN2110L G158
Contextual Info: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

ZVN2120

Abstract: ZVN2120B
Contextual Info: plessey s e n i c o n d /d i s c r e t e 7220533 "t5 PLESSEY SEMICOND/DI SCRETE d F | ? 22GS33 □□□Sbbl □ 95D 0 5 6 6 1 T- N-channel enhancement mode vertical DMOS FET 3J-o? ZVN2120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

g191

Contextual Info: PLESSEY SEflICOND/DISCRETE 7220533 PLESSEY SEM ICO ND/DI SCRETE M T | ? 2 a D 5 3 3 DQGSbflS 3 T " 95D 05 6 8 5 D T N-channel enhancement mode vertical DMOS FET - 3 ° l'O J ZVN2220 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

N-0120

Abstract: N0120
Contextual Info: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement­ mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

ZVN2210A

Abstract: ZVN2210L ZVN2210 ZVN2210B G179
Contextual Info: PLESSEY S E M I C O N D / D I S C R E T E T 5 De 1 ? E 5 D S 3 3 7220533 PLES SE Y S E M IC ON D/ DI SCR E TE N-channel enhancement mode vertical DMOS FET DOOSt,? 95D 05677 4 D ZVN2210 i ! FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

ZVNL120

Contextual Info: PLESSEY s e u i c o n d /d i s c r e t e ]>F|7220S33 DODSSTl S | ~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05591 T - '3 5 '- '2 N-channel enhancement mode vertical DMOS FET S' ZVNL120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown

IRF0120

Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)

n2106

Abstract: vn2106 ZVN2106 Ferranti zvn
Contextual Info: PLESSEY SEMICOND/DISCRETE DE~|? 5 5 DS 33 GOOSbMS a f ” 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 05645 T" 3 1 - 0 ? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds •

ZVN2120

Contextual Info: R5D ZETEX S E M I C O N D U C T O R S T CI70S70 O D D S b b l J> =i • ZETB 95D 0 5 6 6 1 T - 3 ? -o ? N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES Compact geometry Fast switching speeds No secondary breakdown Excellent temperature stability

5D diode

Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
Contextual Info: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds

t5d diode

Abstract: T5D SOT23 zetex zvn2206 package details
Contextual Info: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance