FET 2N7000 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

BC237

Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

2N7000P

Contextual Info: -. —. —-.-., .— N-CHANNEL 2- MARCH . . .- 2N7000P MODE VERTICAL DMOS FET ISSUE “,. ENHANCEMENT I 94 FEATURES * 60 Volt VcEo *R 0S 0. = 5 ‘2 D G s v ABSOLUTE MAXIMUM lJ&h!sJ RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs RdS ON (max) I d(ON) (min) 60V 5£2 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

fet 2n7000

Abstract: 2N7000
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage

2n7000

Abstract: siemens fet to92 fet to92
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

D 92 M 03 DIODE

Abstract: 2n7000 4W-25 fet 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

2N7000

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

2n7000 motorola

Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

2N7000 MOTOROLA

Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il

2N7000P

Abstract: fet to92 48S50 DS-10V DSA003750
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000P ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO * RDS on = 5 Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

2N7000 021

Abstract: fet 2n7000
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2 N 7 0 00 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN / MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc D rain-G ate Voltage R g s = 1 0 M il

Contextual Info: 8-94 C 2 2N7000 N -C H A N N EL ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25°C • FAST SWITCHING • HIGH INPUT IMPEDANCE Drain Source Voltage Gate Source Voltage Continuous Drain Current Maximum Device Power Dissipation Thermal Resistance R thjA

S0014

Contextual Info: INTER F E T CORP b5E D • MfiEbööfi DOnObDS 3bS £ 2N7000 N-CH A N N EL ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25°C • FAST SWITCHING • HIGH INPUT IMPEDANCE Drain Source Voltage Gate Source Voltage Continuous Drain Current

fet 2n7000

Abstract: 2 watt fet
Contextual Info: FUNCTION GUIDE MOSFETs SOT-23/TO-92 SMALL SIGNAL FET N/P-CHANNEL Part Number B V d s s (V) lD (o n )(A ) R Ds(on)(',.>) Rtf ja(K/W) PD|Watt) SF5030 500 0.06 300.000 312.50 0.4 2N7000 60 0.20 5.000 312.50 0.4 975 2N7002 60 0.115 5.000 625.00 0.2 978 Page Package

SD5000

Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
Contextual Info: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Symbol Value Drain Source Voltage Voss 60 Drain-Gate Voltage Rg s = 1-0 M il vdgr 60 Gate-Source Voltage

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

SD5000

Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
Contextual Info: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application