FET 2SK109 Search Results

A2142

Abstract: 2sk mosfet
Contextual Info: 2SK1096-M SIPMOS FUJI POWER MOS-FET F-III SERIES N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers

2SK1096-MR

Abstract: A2144 1096-MR A2142
Contextual Info: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers

z9l3

Abstract: a2142 2SK1096-MR SERIES UK5 A2144
Contextual Info: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers

Contextual Info: 2SK1098-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications

2SK1098-MR

Abstract: A2146 2SK1098MR A2147
Contextual Info: 2SK1098-MR FUJI POWER MOS-FET N-CUANNEL SILICON POWER MOS-FET F - III S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • M ctor controllers

ITK 2-1

Abstract: 2SK1099 schematic symbols UPS TCA 430
Contextual Info: 2SK1099 S I P M O S ^ i'^ - M O S - F E T N ? * * ;t^ < 7 - M O S-FET F-I SERIES ro > N-CHANNEl SILICON POWER MOS-FET : Features : Outline Drawings H igh speed switching Low on-resisiance N o secondary breakdown • D U J j^ iV ' •f t H i g Low driving powe<

2SK2728

Abstract: 2sk2729
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK1098-M

Contextual Info: 2SK1098-M N-channel MOS-FET F-III Series 150V > Features - 0,5Ω 6A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

2SK109

Contextual Info: 2SK1098-M N-channel MOS-FET F-III Series 150V > Features - 0,5Ω 6A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

2SK66

Contextual Info: 2SK1092 - Preliminary SIE D • SINGLE GATE GaAs M ES FET HITACHI/ OPTOELECTRONICS VHF/UHF W IDE BAND AMPLIFIER I MMTbEQS 0011700 071 ■ HITM OUTLINE DRAWING ■ A B S O L U T E M AXIMUM R A T IN G S

2SK1094

Abstract: 2SK971
Contextual Info: 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1093

Abstract: 2SK970
Contextual Info: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1095

Abstract: 2SK972
Contextual Info: 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1092

Abstract: 2SK666
Contextual Info: 2SK1092 Preliminary SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER • OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : 1• 2. 3. 4. Source G ate NC D rain Dim ensions in mra (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) Item Drain to Source Voltage

2SK1095

Abstract: 2SK972 Hitachi DSA0015
Contextual Info: 2SK1095 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2sk970

Abstract: Hitachi DSA0017 Hitachi DSA00175
Contextual Info: 2SK1093 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1094

Abstract: 2SK971 2SK109 Hitachi DSA0015
Contextual Info: 2SK1094 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1094 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1093 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1095 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

A2147

Abstract: 2sk109
Contextual Info: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce

A2146

Abstract: 2sk 30A MOSFET 1098M DIODE B91 2SK1098-M PJ50 2sk mosfet
Contextual Info: 2SK1098-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance

k502

Abstract: cnc schematic 2SK1096-M 2SK1096M CQ 417
Contextual Info: 2SK1096-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • O utline D raw ing s ■ Features • High current • Low on-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ransconductance