FET 2SK125 Search Results

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2SK1259

Contextual Info: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R Ds (on) l = 0 .0 1 2 i! (typ.) Unit: mm 20.5max. • High switching rate : U = 700ns (typ.) 5.3max. • No secondary breakdown

2SK1258

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.

Contextual Info: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R DS (on) l = 0 .0 1 2 fl (typ.) • High sw itching ra te : tf= 700ns (typ.) • No secondary breakdow n • Low voltage drive is possible

2sk1259

Contextual Info: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)

2SK1256

Abstract: TC-2510
Contextual Info: Power F-MOS FET 2SK1256 2SK1256 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R DS on : R (on) 1 = 0 .07 ft (typ.) ds Unit: mm • High sw itching ra te : t f= 9 5 n s (typ.) • No secondary breakdow n • Low voltage drive is possible

2sk1257

Abstract: 20DRAM CRA-600
Contextual Info: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK1258

Abstract: 100-C SC-65 3010F
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L o w O N r e s i s t a n c e R d s o n : R d s (o n ) 1 = 0 . 0 2 i l ( ty p .) Unit: mm • H ig h s w itc h in g r a t e : ti = 3 5 0 n s ( t y p . )

2SK1255

Abstract: 2SK125
Contextual Info: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n

2SK1255

Contextual Info: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n

2SK1257

Abstract: contact id converter
Contextual Info: Power F-MOS FET 2SK1257 2SK1257 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R Ds on : R ds (on) l = 0 . 0 2 4 i l (ty p .) Unit: mm • H igh sw itch in g r a te : t<= 3 2 0 n s (ty p .) • N o s e c o n d a ry b reak d o w n

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

2SK125

Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Contextual Info: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise

2SK1254STL-E

Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source

2SK125

Abstract: 2SK1254
Contextual Info: 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1254

Abstract: Hitachi DSA00347
Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHI 2SK* TO-247

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA002780

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA00279

Abstract: 2sk1254
Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA001651

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative