diode SS 2a
Abstract: 2Sk51
Contextual Info: 4 4 9 6 2 'Ü V ‘H I'TACT 17'COP I U t L E O ' l RUN I C S > 2SK513— ?3 73C 10089 DElj| 4 4 T tiE D S D T - 3 f- / / O O lD G ß i S |~ S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • High Breakdown Voltage. • High Speed Switching.
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2SK513--
-2SK513
diode SS 2a
2Sk51
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2SK513
Abstract: 10091 FET 2SK513 Hitachi Scans-001
Contextual Info: -4 4 9 B 2 U S 'HI IAUH1 / UP i U h L h C I R U N 1O S 7 73C 1 00 89 2SK513 0 7 ~ -3 f-/ / 3>E J LiMcìtiEDS O D I O O S 11! S S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES ' • High Breakdow n Voltage. • • High Speed Sw itching.
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-2SK513
2SK513
10091
FET 2SK513
Hitachi Scans-001
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diode t25 4 L5
Abstract: 2SK513 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26
Contextual Info: 44962TJ5"'H TT'A C TH I7"C U P I O E L E C I RON IC S V 2SK513— P 7 -—3f-// 73C 10089 73 SILICON N -C H A N N E L M O S FET HIGH S P EE D POW ER SWITCHING • FEATURES • H igh B reak d o w n V oltage. • H igh S p e e d S w itch in g . • H igh C utoff fr e q u e n c y .
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449620b
1Q089-q
2SK513
T0-220AB)
-2SK513
diode t25 4 L5
2sk513 o
DIODE T25 4 Jo
hitachi 2sk513
RA26
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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2SK4111
Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Contextual Info: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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2SK258
O-204AA/TO-3
2SK259
2SK258H
O-218
2SK695
2SK695A
2SK4111
2SK4110
2SK4106
2sk4112
2sk2671
2sk4113
2SK2648
2N5121
2N5160 equivalent
2SK2666
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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2SK520
Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id
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2SJ299
2SJ300
2SJ317
2SK11
2SK12
2SK521
100MHZ
2SK522
20mVmax
2SK523
2SK520
2SK523
2SK508
2SK537
2sk515
2SK511
2SK514
2SK518
2SK519
2sk43
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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