HL8311 Search Results

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

Contextual Info: HL8311E Laser D iode Description HL831 IE is a 0.8 /^m G aAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc memories and various other types o f optical equip­ ment. A screw-on type package facilitates the adjust­

Contextual Info: HL8311G-Laser Diode Description H L 8 3 1 1 G is a 0 .8 /nm G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le a s a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip ­

Contextual Info: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

HL7801

Abstract: HL7806
Contextual Info: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838

HL7806

Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Contextual Info: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.

HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION