HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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HL8311E/G
HL8311E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807SG
HL8311E
HL8311G
HL8312E
Hitachi Scans-001
P015M
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Untitled
Abstract: No abstract text available
Text: HL8311E Laser D iode Description HL831 IE is a 0.8 /^m G aAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc memories and various other types o f optical equip ment. A screw-on type package facilitates the adjust
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HL8311E
HL831
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Untitled
Abstract: No abstract text available
Text: HL8311G-Laser Diode Description H L 8 3 1 1 G is a 0 .8 /nm G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le a s a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip
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HL8311G-------------Laser
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Untitled
Abstract: No abstract text available
Text: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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001E0b3
HL8311E/G
HL8311E/G
T-41-05
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HL7801
Abstract: HL7806
Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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HL7806
Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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